Narrow bandwidth long wavelength resonant cavity photodiodes

B. Corbett; L. Considine; S. Walsh; W. M. Kelly

doi:10.1049/el:19931436

Narrow bandwidth long wavelength resonant cavity photodiodes

B. Corbett
, L. Considine
, S. Walsh
, W. M. Kelly

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Resonant cavity photodetectors at 1.53 µm are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a pin structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16 µm long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.

Original language	English
Pages (from-to)	2148-2149
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	24
DOIs	https://doi.org/10.1049/el:19931436
Publication status	Published - Nov 1993

Keywords

Laser cavity resonato
Photodiodes

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10.1049/el:19931436

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title = "Narrow bandwidth long wavelength resonant cavity photodiodes",

abstract = "Resonant cavity photodetectors at 1.53 µm are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a pin structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16 µm long cavity is 59 corresponding to mirror reflectivies of 94 and 90\%.",

keywords = "Laser cavity resonato, Photodiodes",

author = "B. Corbett and L. Considine and S. Walsh and Kelly, \{W. M.\}",

year = "1993",

month = nov,

doi = "10.1049/el:19931436",

language = "English",

volume = "29",

pages = "2148--2149",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "24",

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TY - JOUR

T1 - Narrow bandwidth long wavelength resonant cavity photodiodes

AU - Corbett, B.

AU - Considine, L.

AU - Walsh, S.

AU - Kelly, W. M.

PY - 1993/11

Y1 - 1993/11

N2 - Resonant cavity photodetectors at 1.53 µm are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a pin structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16 µm long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.

AB - Resonant cavity photodetectors at 1.53 µm are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a pin structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16 µm long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.

KW - Laser cavity resonato

KW - Photodiodes

UR - https://www.scopus.com/pages/publications/0027701541

U2 - 10.1049/el:19931436

DO - 10.1049/el:19931436

M3 - Article

AN - SCOPUS:0027701541

SN - 0013-5194

VL - 29

SP - 2148

EP - 2149

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Narrow bandwidth long wavelength resonant cavity photodiodes

Abstract

Keywords

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