Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

Research output: Contribution to journalArticlepeer-review

Abstract

The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.

Original languageEnglish
Pages (from-to)19-27
Number of pages9
JournalApplied Surface Science
Volume383
DOIs
Publication statusPublished - 15 Oct 2016

Keywords

  • GaAs
  • Hydrophobic surface
  • InP
  • MOVPE
  • XPS

Fingerprint

Dive into the research topics of 'Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs'. Together they form a unique fingerprint.

Cite this