Native oxides formation on MOVPE grown binary III-V materials - Impact on surface wettability

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Abstract

The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.

Original languageEnglish
Title of host publication26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479957293
DOIs
Publication statusPublished - 2014
Event26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France
Duration: 11 May 201415 May 2014

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Country/TerritoryFrance
CityMontpellier
Period11/05/1415/05/14

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