TY - GEN
T1 - Native oxides formation on MOVPE grown binary III-V materials - Impact on surface wettability
AU - Gocalinska, Agnieszka
AU - Bogdan, Justin
AU - Hughes, Greg
AU - Pelucchi, Emanuele
PY - 2014
Y1 - 2014
N2 - The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.
AB - The native oxides formation on ambient-stored metalorganic vapour phase epitaxy (MOVPE) grown GaAs, InP and InAs is documented by contact angle measurements and X-ray photoelectron spectroscopy (XPS). The time dependent transitions from hydrophobic to hydrophilic states are presented alongside the change in relative amount of different types of oxides forming on the epitaxial surfaces. We present a qualitative agreement of wettability properties with the amount of group III oxides and lack of such correlation with the overall oxide composition, somehow indicating a (surprising) minor role of group V oxides.
UR - https://www.scopus.com/pages/publications/84906748723
U2 - 10.1109/ICIPRM.2014.6880537
DO - 10.1109/ICIPRM.2014.6880537
M3 - Conference proceeding
AN - SCOPUS:84906748723
SN - 9781479957293
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Y2 - 11 May 2014 through 15 May 2014
ER -