Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström; B. Raeissi; S. Hall; O. Buiu; M. C. Lemme; H. D.B. Gottlob; P. K. Hurley; K. Cherkaoui

doi:10.1016/j.sse.2007.02.021

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström
, B. Raeissi
, S. Hall
, O. Buiu
, M. C. Lemme
, H. D.B. Gottlob
, P. K. Hurley
, K. Cherkaoui

Research output: Contribution to journal › Article › peer-review

Abstract

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

Original language	English
Pages (from-to)	622-626
Number of pages	5
Journal	Solid-State Electronics
Volume	51
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.sse.2007.02.021
Publication status	Published - Apr 2007

Keywords

CMOS
Dielectric constant
High-k dielectrics
Rare earth oxides

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10.1016/j.sse.2007.02.021

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abstract = "From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.",

keywords = "CMOS, Dielectric constant, High-k dielectrics, Rare earth oxides",

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T1 - Navigation aids in the search for future high-k dielectrics

T2 - Physical and electrical trends

AU - Engström, O.

AU - Raeissi, B.

AU - Hall, S.

AU - Buiu, O.

AU - Lemme, M. C.

AU - Gottlob, H. D.B.

AU - Hurley, P. K.

AU - Cherkaoui, K.

PY - 2007/4

Y1 - 2007/4

N2 - From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

AB - From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

KW - CMOS

KW - Dielectric constant

KW - High-k dielectrics

KW - Rare earth oxides

UR - https://www.scopus.com/pages/publications/34047264963

U2 - 10.1016/j.sse.2007.02.021

DO - 10.1016/j.sse.2007.02.021

M3 - Article

AN - SCOPUS:34047264963

SN - 0038-1101

VL - 51

SP - 622

EP - 626

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4 SPEC. ISS.

ER -

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Abstract

Keywords

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