Near ideal, high barrier, Au-nGaN Schottky contacts

T. G.G. Maffeis; M. C. Simmonds; S. A. Clark; F. Peiro; P. Haines; P. J. Parbrook

doi:10.1088/0022-3727/33/20/101

Near ideal, high barrier, Au-nGaN Schottky contacts

T. G.G. Maffeis
, M. C. Simmonds
, S. A. Clark
, F. Peiro
, P. Haines
, P. J. Parbrook

Research output: Contribution to journal › Article › peer-review

Abstract

Gold Schottky contacts formed in situ on n-type GaN after a 600 °C anneal have been characterized by current-voltage (I-V) measurements and x-ray photoelectron spectroscopy (XPS). The mean Schottky barrier height and lowest ideality factor were found to be 1.24 eV and 1.03, respectively, as measured by I-V. The highest barrier measured was 1.35 eV with an ideality factor of 1.12. XPS data showed that the 600 °C anneal produced an upward band bending of 0.35 eV, the subsequent gold deposition caused a further band bending of 0.25 eV in the same direction. Our results can be interpreted in terms of the Cowley-Sze model and suggest a high density of acceptor states at the bare GaN surface.

Original language	English
Pages (from-to)	L115-L118
Journal	Journal of Physics D: Applied Physics
Volume	33
Issue number	20
DOIs	https://doi.org/10.1088/0022-3727/33/20/101
Publication status	Published - 21 Oct 2000
Externally published	Yes

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title = "Near ideal, high barrier, Au-nGaN Schottky contacts",

abstract = "Gold Schottky contacts formed in situ on n-type GaN after a 600 °C anneal have been characterized by current-voltage (I-V) measurements and x-ray photoelectron spectroscopy (XPS). The mean Schottky barrier height and lowest ideality factor were found to be 1.24 eV and 1.03, respectively, as measured by I-V. The highest barrier measured was 1.35 eV with an ideality factor of 1.12. XPS data showed that the 600 °C anneal produced an upward band bending of 0.35 eV, the subsequent gold deposition caused a further band bending of 0.25 eV in the same direction. Our results can be interpreted in terms of the Cowley-Sze model and suggest a high density of acceptor states at the bare GaN surface.",

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doi = "10.1088/0022-3727/33/20/101",

language = "English",

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TY - JOUR

T1 - Near ideal, high barrier, Au-nGaN Schottky contacts

AU - Maffeis, T. G.G.

AU - Simmonds, M. C.

AU - Clark, S. A.

AU - Peiro, F.

AU - Haines, P.

AU - Parbrook, P. J.

PY - 2000/10/21

Y1 - 2000/10/21

N2 - Gold Schottky contacts formed in situ on n-type GaN after a 600 °C anneal have been characterized by current-voltage (I-V) measurements and x-ray photoelectron spectroscopy (XPS). The mean Schottky barrier height and lowest ideality factor were found to be 1.24 eV and 1.03, respectively, as measured by I-V. The highest barrier measured was 1.35 eV with an ideality factor of 1.12. XPS data showed that the 600 °C anneal produced an upward band bending of 0.35 eV, the subsequent gold deposition caused a further band bending of 0.25 eV in the same direction. Our results can be interpreted in terms of the Cowley-Sze model and suggest a high density of acceptor states at the bare GaN surface.

AB - Gold Schottky contacts formed in situ on n-type GaN after a 600 °C anneal have been characterized by current-voltage (I-V) measurements and x-ray photoelectron spectroscopy (XPS). The mean Schottky barrier height and lowest ideality factor were found to be 1.24 eV and 1.03, respectively, as measured by I-V. The highest barrier measured was 1.35 eV with an ideality factor of 1.12. XPS data showed that the 600 °C anneal produced an upward band bending of 0.35 eV, the subsequent gold deposition caused a further band bending of 0.25 eV in the same direction. Our results can be interpreted in terms of the Cowley-Sze model and suggest a high density of acceptor states at the bare GaN surface.

UR - https://www.scopus.com/pages/publications/0034293949

U2 - 10.1088/0022-3727/33/20/101

DO - 10.1088/0022-3727/33/20/101

M3 - Article

AN - SCOPUS:0034293949

SN - 0022-3727

VL - 33

SP - L115-L118

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 20

ER -

Near ideal, high barrier, Au-nGaN Schottky contacts

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