(NH4)2S passivation of high-k/In 0.53Ga0.47As interfaces: A systematic study of (NH 4)2S concentration

É O'Connor; B. Brennan; R. Contreras; M. Milojevic; K. Cherkaoui; S. Monaghan; S. B. Newcomb; M. E. Pemble; G. Hughes; R. M. Wallace; P. K. Hurley

doi:10.1149/1.3375606

(NH₄)₂S passivation of high-k/In _0.53Ga_0.47As interfaces: A systematic study of (NH ₄)₂S concentration

É O'Connor
, B. Brennan
, R. Contreras
, M. Milojevic
, K. Cherkaoui
, S. Monaghan
, S. B. Newcomb
, M. E. Pemble
, G. Hughes
, R. M. Wallace
, P. K. Hurley

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

In this work we present the results of an investigation into the effectiveness of varying (NH₄)₂S concentrations in the passivation of n-type and p-type In_0.53Ga_0.47As, as determined through analysis of electrical properties. Samples were degreased and immersed in aqueous (NH₄)₂S solutions of concentrations 22%, 10%, 5%, or 1% for 20 minutes at 295K, immediately prior to ALD growth. Capacitance-voltage analysis of Au/Ni/Al₂O₃/In _0.53Ga_0.47As structures indicate that the lowest frequency dispersion over the bias range examined occurs for n and p-type devices treated in 10% (NH₄)₂S solution. The deleterious effect on interface state density of increased ambient exposure time after removal from (NH₄)₂S solution is also presented. Estimations of peak interface state density, D_it, extracted from the equivalent parallel conductance Gp, using an approximation to the conductance method, are used for comparison of the different passivation conditions.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	231-238
Number of pages	8
Edition	1
ISBN (Electronic)	9781607681410
ISBN (Print)	9781566777919
DOIs	https://doi.org/10.1149/1.3375606
Publication status	Published - 2010

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

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10.1149/1.3375606

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O'Connor, É., Brennan, B., Contreras, R., Milojevic, M., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Pemble, M. E., Hughes, G., Wallace, R. M., & Hurley, P. K. (2010). (NH₄)₂S passivation of high-k/In _0.53Ga_0.47As interfaces: A systematic study of (NH ₄)₂S concentration. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 231-238). (ECS Transactions; Vol. 28, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3375606

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title = "(NH4)2S passivation of high-k/In 0.53Ga0.47As interfaces: A systematic study of (NH 4)2S concentration",

abstract = "In this work we present the results of an investigation into the effectiveness of varying (NH4)2S concentrations in the passivation of n-type and p-type In0.53Ga0.47As, as determined through analysis of electrical properties. Samples were degreased and immersed in aqueous (NH4)2S solutions of concentrations 22\%, 10\%, 5\%, or 1\% for 20 minutes at 295K, immediately prior to ALD growth. Capacitance-voltage analysis of Au/Ni/Al2O3/In 0.53Ga0.47As structures indicate that the lowest frequency dispersion over the bias range examined occurs for n and p-type devices treated in 10\% (NH4)2S solution. The deleterious effect on interface state density of increased ambient exposure time after removal from (NH4)2S solution is also presented. Estimations of peak interface state density, Dit, extracted from the equivalent parallel conductance Gp, using an approximation to the conductance method, are used for comparison of the different passivation conditions.",

author = "{\'E} O'Connor and B. Brennan and R. Contreras and M. Milojevic and K. Cherkaoui and S. Monaghan and Newcomb, \{S. B.\} and Pemble, \{M. E.\} and G. Hughes and Wallace, \{R. M.\} and Hurley, \{P. K.\}",

year = "2010",

doi = "10.1149/1.3375606",

language = "English",

isbn = "9781566777919",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "231--238",

booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",

address = "United States",

edition = "1",

}

O'Connor, É, Brennan, B, Contreras, R, Milojevic, M, Cherkaoui, K, Monaghan, S, Newcomb, SB, Pemble, ME, Hughes, G, Wallace, RM & Hurley, PK 2010, (NH₄)₂S passivation of high-k/In _0.53Ga_0.47As interfaces: A systematic study of (NH ₄)₂S concentration. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, Electrochemical Society Inc., pp. 231-238. https://doi.org/10.1149/1.3375606

(NH₄)₂S passivation of high-k/In _0.53Ga_0.47As interfaces: A systematic study of (NH ₄)₂S concentration. / O'Connor, É; Brennan, B.; Contreras, R. et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2010. p. 231-238 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - (NH4)2S passivation of high-k/In 0.53Ga0.47As interfaces

T2 - A systematic study of (NH 4)2S concentration

AU - O'Connor, É

AU - Brennan, B.

AU - Contreras, R.

AU - Milojevic, M.

AU - Cherkaoui, K.

AU - Monaghan, S.

AU - Newcomb, S. B.

AU - Pemble, M. E.

AU - Hughes, G.

AU - Wallace, R. M.

AU - Hurley, P. K.

PY - 2010

Y1 - 2010

N2 - In this work we present the results of an investigation into the effectiveness of varying (NH4)2S concentrations in the passivation of n-type and p-type In0.53Ga0.47As, as determined through analysis of electrical properties. Samples were degreased and immersed in aqueous (NH4)2S solutions of concentrations 22%, 10%, 5%, or 1% for 20 minutes at 295K, immediately prior to ALD growth. Capacitance-voltage analysis of Au/Ni/Al2O3/In 0.53Ga0.47As structures indicate that the lowest frequency dispersion over the bias range examined occurs for n and p-type devices treated in 10% (NH4)2S solution. The deleterious effect on interface state density of increased ambient exposure time after removal from (NH4)2S solution is also presented. Estimations of peak interface state density, Dit, extracted from the equivalent parallel conductance Gp, using an approximation to the conductance method, are used for comparison of the different passivation conditions.

AB - In this work we present the results of an investigation into the effectiveness of varying (NH4)2S concentrations in the passivation of n-type and p-type In0.53Ga0.47As, as determined through analysis of electrical properties. Samples were degreased and immersed in aqueous (NH4)2S solutions of concentrations 22%, 10%, 5%, or 1% for 20 minutes at 295K, immediately prior to ALD growth. Capacitance-voltage analysis of Au/Ni/Al2O3/In 0.53Ga0.47As structures indicate that the lowest frequency dispersion over the bias range examined occurs for n and p-type devices treated in 10% (NH4)2S solution. The deleterious effect on interface state density of increased ambient exposure time after removal from (NH4)2S solution is also presented. Estimations of peak interface state density, Dit, extracted from the equivalent parallel conductance Gp, using an approximation to the conductance method, are used for comparison of the different passivation conditions.

UR - https://www.scopus.com/pages/publications/78650570126

U2 - 10.1149/1.3375606

DO - 10.1149/1.3375606

M3 - Chapter

AN - SCOPUS:78650570126

SN - 9781566777919

T3 - ECS Transactions

SP - 231

EP - 238

BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6

PB - Electrochemical Society Inc.

ER -

O'Connor É, Brennan B, Contreras R, Milojevic M, Cherkaoui K, Monaghan S et al. (NH₄)₂S passivation of high-k/In _0.53Ga_0.47As interfaces: A systematic study of (NH ₄)₂S concentration. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. Electrochemical Society Inc. 2010. p. 231-238. (ECS Transactions; 1). doi: 10.1149/1.3375606

(NH₄)₂S passivation of high-k/In _0.53Ga_0.47As interfaces: A systematic study of (NH ₄)₂S concentration

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