NiGe contacts and junction architectures for P and As doped germanium devices

In this paper, the contact resistivity of NiGe on n-doped Ge is extracted. Although phosphorus is the slowest n-type dopant in terms of diffusion in Ge, the corresponding contact resistivity data for this dopant are sparse. Contact resistivity dependence on implant dose will be determined, as well as a comparison of phosphorus- and arsenic-doped Ge layers. The impact of high contact resistance is evaluated for future technology n-type metal-oxide-semiconductor germanium devices.