Nitrogen incorporation effects on site-controlled quantum dots

G. Juska; V. Dimastrodonato; L. O. Mereni; E. Pelucchi

doi:10.1063/1.3666426

Nitrogen incorporation effects on site-controlled quantum dots

G. Juska
, V. Dimastrodonato
, L. O. Mereni
, E. Pelucchi

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We report here on the optical properties of site-controlled diluted nitride In _0.25Ga _0.75As _1-xN _x quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). We show photoluminescence energy shift as a function of nitrogen precursor U-dimethylhydrazine, with a maximum value of 35 meV achieved. Optical features, substantially different from the counterpart nitrogen-free dots, are presented: an antibinding biexciton, a large distribution of lifetimes, significantly reduced fine structure splitting.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	407-408
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666426
Publication status	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/10 → 30/07/10

Keywords

diluted nitrides
micro-photoluminescence
MOVPE
pyramidal quantum dots

Access to Document

10.1063/1.3666426

Cite this

@inproceedings{a0a3fe30a18e4f21b31cfeef35e6a19e,

title = "Nitrogen incorporation effects on site-controlled quantum dots",

abstract = "We report here on the optical properties of site-controlled diluted nitride In 0.25Ga 0.75As 1-xN x quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). We show photoluminescence energy shift as a function of nitrogen precursor U-dimethylhydrazine, with a maximum value of 35 meV achieved. Optical features, substantially different from the counterpart nitrogen-free dots, are presented: an antibinding biexciton, a large distribution of lifetimes, significantly reduced fine structure splitting.",

keywords = "diluted nitrides, micro-photoluminescence, MOVPE, pyramidal quantum dots",

author = "G. Juska and V. Dimastrodonato and Mereni, \{L. O.\} and E. Pelucchi",

year = "2011",

doi = "10.1063/1.3666426",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "407--408",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Juska, G, Dimastrodonato, V, Mereni, LO & Pelucchi, E 2011, Nitrogen incorporation effects on site-controlled quantum dots. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 407-408, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25/07/10. https://doi.org/10.1063/1.3666426

Nitrogen incorporation effects on site-controlled quantum dots. / Juska, G.; Dimastrodonato, V.; Mereni, L. O. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 407-408 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Nitrogen incorporation effects on site-controlled quantum dots

AU - Juska, G.

AU - Dimastrodonato, V.

AU - Mereni, L. O.

AU - Pelucchi, E.

PY - 2011

Y1 - 2011

N2 - We report here on the optical properties of site-controlled diluted nitride In 0.25Ga 0.75As 1-xN x quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). We show photoluminescence energy shift as a function of nitrogen precursor U-dimethylhydrazine, with a maximum value of 35 meV achieved. Optical features, substantially different from the counterpart nitrogen-free dots, are presented: an antibinding biexciton, a large distribution of lifetimes, significantly reduced fine structure splitting.

AB - We report here on the optical properties of site-controlled diluted nitride In 0.25Ga 0.75As 1-xN x quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). We show photoluminescence energy shift as a function of nitrogen precursor U-dimethylhydrazine, with a maximum value of 35 meV achieved. Optical features, substantially different from the counterpart nitrogen-free dots, are presented: an antibinding biexciton, a large distribution of lifetimes, significantly reduced fine structure splitting.

KW - diluted nitrides

KW - micro-photoluminescence

KW - MOVPE

KW - pyramidal quantum dots

UR - https://www.scopus.com/pages/publications/84855502564

U2 - 10.1063/1.3666426

DO - 10.1063/1.3666426

M3 - Conference proceeding

AN - SCOPUS:84855502564

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 407

EP - 408

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

Nitrogen incorporation effects on site-controlled quantum dots

Abstract

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Conference

Keywords

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