Nonvolatile multilevel conductance and memory effects in organic thin films

M. Lauters; B. McCarthy; D. Sarid; G. E. Jabbour

doi:10.1063/1.2138809

Nonvolatile multilevel conductance and memory effects in organic thin films

M. Lauters
, B. McCarthy
, D. Sarid
, G. E. Jabbour

Research output: Contribution to journal › Article › peer-review

Abstract

Organic thin-film structures, including organic light-emitting diodes, are demonstrated to contain multiple nonvolatile conductance states at low-read voltages. Retention time of states is more than several weeks, and more than 20 000 write-read-rewrite-read cycles have been performed with minimal degradation. The electrical characteristics of these devices are consistent with metal diffusion or filament phenomena found in metal-insulator-metal structures, suggesting a possible mechanism by which the states are stored.

Original language	English
Article number	231105
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2138809
Publication status	Published - 2005
Externally published	Yes

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10.1063/1.2138809

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title = "Nonvolatile multilevel conductance and memory effects in organic thin films",

abstract = "Organic thin-film structures, including organic light-emitting diodes, are demonstrated to contain multiple nonvolatile conductance states at low-read voltages. Retention time of states is more than several weeks, and more than 20 000 write-read-rewrite-read cycles have been performed with minimal degradation. The electrical characteristics of these devices are consistent with metal diffusion or filament phenomena found in metal-insulator-metal structures, suggesting a possible mechanism by which the states are stored.",

author = "M. Lauters and B. McCarthy and D. Sarid and Jabbour, \{G. E.\}",

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AU - Lauters, M.

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AU - Sarid, D.

AU - Jabbour, G. E.

PY - 2005

Y1 - 2005

N2 - Organic thin-film structures, including organic light-emitting diodes, are demonstrated to contain multiple nonvolatile conductance states at low-read voltages. Retention time of states is more than several weeks, and more than 20 000 write-read-rewrite-read cycles have been performed with minimal degradation. The electrical characteristics of these devices are consistent with metal diffusion or filament phenomena found in metal-insulator-metal structures, suggesting a possible mechanism by which the states are stored.

AB - Organic thin-film structures, including organic light-emitting diodes, are demonstrated to contain multiple nonvolatile conductance states at low-read voltages. Retention time of states is more than several weeks, and more than 20 000 write-read-rewrite-read cycles have been performed with minimal degradation. The electrical characteristics of these devices are consistent with metal diffusion or filament phenomena found in metal-insulator-metal structures, suggesting a possible mechanism by which the states are stored.

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U2 - 10.1063/1.2138809

DO - 10.1063/1.2138809

M3 - Article

AN - SCOPUS:28444497734

SN - 0003-6951

VL - 87

SP - 1

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JO - Applied Physics Letters

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Nonvolatile multilevel conductance and memory effects in organic thin films

Abstract

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