@inbook{880e73a16d404e988c7b41036a050ab0,
title = "Novel current confinement structure for MBE-grown CdZnSe/ZnSe MQW laser diodes by using an InGaP/GaAs patterned substrate",
abstract = "The article presents current confinement structures of MBE grown CdZnSe/ZnSe MQW laser diodes on patterned p-InGaP layers on p-GaAs substrates. A one dimensional self consistent simulation and experimental I-V characteristics for ZnSe p-n junctions showed that ZnSe based LD with p-InGaP layer can be operated at a lower voltage. Dislocations on edge of the ridge region do not act as obstacles on current path. Therefore it was observed that confinement structure can inject most of the current into the active region.",
author = "M. Onomura and M. Ishikawa and Y. Nishikawa and S. Saito and Parbrook, \{P. J.\} and K. Nitta and J. Rennie and G. Hatakoshi",
year = "1994",
language = "English",
isbn = "0780319710",
series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",
publisher = "Publ by IEEE",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",
note = "Proceedings of the Conference on Lasers and Electro-Optics ; Conference date: 08-05-1994 Through 13-05-1994",
}