Novel electronic and optoelectronic properties of GaInNAs and related alloys

  • Eoin P. O'Reilly
  • , S. Fahy
  • , A. Lindsay
  • , S. Tomić
  • , R. Fehse
  • , A. R. Adams
  • , S. J. Sweeney
  • , A. D. Andreev
  • , P. J. Klar
  • , H. Grüning
  • , H. Riechert

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 µm vertical emitting lasers.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2003
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)1557527334
Publication statusPublished - 2003
EventConference on Lasers and Electro-Optics, CLEO 2003 - Baltimore, United States
Duration: 1 Jun 20036 Jun 2003

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2003
Country/TerritoryUnited States
CityBaltimore
Period1/06/036/06/03

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