Abstract
We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 μm vertical emitting lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 523-525 |
| Number of pages | 3 |
| Journal | OSA Trends in Optics and Photonics Series |
| Volume | 88 |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States Duration: 1 Jun 2003 → 6 Jun 2003 |