Skip to main navigation Skip to search Skip to main content

Novel parameter extraction techniques for low-voltage, low-power technologies

  • S. Minehane
  • , K. G. McCarthy
  • , P. O'Sullivan
  • , A. Mathewson

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

This paper outlines the development of novel quick parameter extraction techniques which provide geometry-independent BSIM3v3.2 parameter sets. 29 parameters' are extracted from only 97 measured 1-V data points. A comparison of measured and fitted device data for sample nMOSFET and pMOSFET devices from a O.18fμm CMOS process is presented.

Original languageEnglish
Title of host publicationESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
EditorsR.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
PublisherIEEE Computer Society
Pages452-455
Number of pages4
ISBN (Electronic)2863322451, 9782863322451
Publication statusPublished - 1999
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: 13 Sep 199915 Sep 1999

Publication series

NameEuropean Solid-State Device Research Conference
Volume13-15 Sept. 1999
ISSN (Print)1930-8876

Conference

Conference29th European Solid-State Device Research Conference, ESSDERC 1999
Country/TerritoryBelgium
CityLeuven
Period13/09/9915/09/99

Fingerprint

Dive into the research topics of 'Novel parameter extraction techniques for low-voltage, low-power technologies'. Together they form a unique fingerprint.

Cite this