@inproceedings{3bf56a26a76f4fbd88d6a319f2c47cc5,
title = "Novel parameter extraction techniques for low-voltage, low-power technologies",
abstract = "This paper outlines the development of novel quick parameter extraction techniques which provide geometry-independent BSIM3v3.2 parameter sets. 29 parameters' are extracted from only 97 measured 1-V data points. A comparison of measured and fitted device data for sample nMOSFET and pMOSFET devices from a O.18fμm CMOS process is presented.",
author = "S. Minehane and McCarthy, \{K. G.\} and P. O'Sullivan and A. Mathewson",
year = "1999",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "452--455",
editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",
booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",
address = "United States",
note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",
}