Novel precursors for the growth of α-In2S3: Trisdialkyldithiocarbamates of indium

Paul O'Brien; David J. Otway; John R. Walsh

doi:10.1016/S0040-6090(97)00691-3

Novel precursors for the growth of α-In₂S₃: Trisdialkyldithiocarbamates of indium

Paul O'Brien
, David J. Otway
, John R. Walsh

Imperial College London

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of cubic α-In₂S₃ have been deposited on glass, GaAs(100) and InP(111) by low-pressure metal-organic chemical vapour deposition (LP-MOCVD), using novel air-stable precursors of general formulae In(S₂CNMeR)₃ [where R = n-Butyl (compound (1)), n-Hexyl (compound (2))]. The predominant phase in all films grown, regardless of substrate or growth temperature, is α-In₂S₃, oriented in the (hhh) direction. The precursor compounds are considerably more volatile than known dialkyldithiocarbamates of indium.

Original language	English
Pages (from-to)	57-61
Number of pages	5
Journal	Thin Solid Films
Volume	315
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)00691-3
Publication status	Published - 2 Mar 1998
Externally published	Yes

Keywords

Indium sulfide
MOCVD

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10.1016/S0040-6090(97)00691-3

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title = "Novel precursors for the growth of α-In2S3: Trisdialkyldithiocarbamates of indium",

abstract = "Thin films of cubic α-In2S3 have been deposited on glass, GaAs(100) and InP(111) by low-pressure metal-organic chemical vapour deposition (LP-MOCVD), using novel air-stable precursors of general formulae In(S2CNMeR)3 [where R = n-Butyl (compound (1)), n-Hexyl (compound (2))]. The predominant phase in all films grown, regardless of substrate or growth temperature, is α-In2S3, oriented in the (hhh) direction. The precursor compounds are considerably more volatile than known dialkyldithiocarbamates of indium.",

keywords = "Indium sulfide, MOCVD",

author = "Paul O'Brien and Otway, \{David J.\} and Walsh, \{John R.\}",

year = "1998",

month = mar,

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doi = "10.1016/S0040-6090(97)00691-3",

language = "English",

volume = "315",

pages = "57--61",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Novel precursors for the growth of α-In2S3

T2 - Trisdialkyldithiocarbamates of indium

AU - O'Brien, Paul

AU - Otway, David J.

AU - Walsh, John R.

PY - 1998/3/2

Y1 - 1998/3/2

N2 - Thin films of cubic α-In2S3 have been deposited on glass, GaAs(100) and InP(111) by low-pressure metal-organic chemical vapour deposition (LP-MOCVD), using novel air-stable precursors of general formulae In(S2CNMeR)3 [where R = n-Butyl (compound (1)), n-Hexyl (compound (2))]. The predominant phase in all films grown, regardless of substrate or growth temperature, is α-In2S3, oriented in the (hhh) direction. The precursor compounds are considerably more volatile than known dialkyldithiocarbamates of indium.

AB - Thin films of cubic α-In2S3 have been deposited on glass, GaAs(100) and InP(111) by low-pressure metal-organic chemical vapour deposition (LP-MOCVD), using novel air-stable precursors of general formulae In(S2CNMeR)3 [where R = n-Butyl (compound (1)), n-Hexyl (compound (2))]. The predominant phase in all films grown, regardless of substrate or growth temperature, is α-In2S3, oriented in the (hhh) direction. The precursor compounds are considerably more volatile than known dialkyldithiocarbamates of indium.

KW - Indium sulfide

KW - MOCVD

UR - https://www.scopus.com/pages/publications/0032473273

U2 - 10.1016/S0040-6090(97)00691-3

DO - 10.1016/S0040-6090(97)00691-3

M3 - Article

AN - SCOPUS:0032473273

SN - 0040-6090

VL - 315

SP - 57

EP - 61

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Novel precursors for the growth of α-In₂S₃: Trisdialkyldithiocarbamates of indium

Abstract

Keywords

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