@inproceedings{9edc384939a14597a36fd15a10ffaeef,
title = "Novel processing for access resistance reduction in Germanium devices",
abstract = "This paper reviews the experimental state-of-the-art in access resistance reduction in Ge devices. Special attention is paid to the doping and thermal annealing state-of-the-art, highlighting in particular those techniques that have been applied to Si devices, but have not yet been properly optimised in Ge. We also look forward to emerging novel processes for access resistance reduction.",
author = "Ray Duffy and Maryam Shayesteh",
year = "2014",
doi = "10.1109/IWJT.2014.6842051",
language = "English",
isbn = "9781479936274",
series = "2014 International Workshop on Junction Technology, IWJT 2014",
publisher = "IEEE Computer Society",
pages = "155--160",
booktitle = "2014 International Workshop on Junction Technology, IWJT 2014",
address = "United States",
note = "14th International Workshop on Junction Technology, IWJT 2014 ; Conference date: 18-05-2014 Through 20-05-2014",
}