TY - JOUR
T1 - Nucleation and chemical transformation of RuO2 films grown on (100) Si substrates by atomic layer deposition
AU - Salaün, Amelie
AU - Newcomb, Simon B.
AU - Povey, Ian M.
AU - Salaün, Mathieu
AU - Keeney, Lynette
AU - O'Mahony, Aileen
AU - Pemble, Martyn E.
PY - 2011/6
Y1 - 2011/6
N2 - We describe the formation of RuO2 thin films grown using atomic layer deposition (ALD) on (100) Si substrates from Ru(EtCp)2 and O2, and the subsequent influence of annealing temperature and atmosphere on the surface morphology and structure of the deposited layers. The films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). The as-deposited films consist of RuO 2 islands. No significant changes in composition or morphology are observed following annealing in N2 for 4 h at either 500 or 700°C. Higher temperature annealing in N2 (820°C, 4 h) results in some modifications to the morphology and structure where ED data indicate the formation of some Ru metal. However, complete transformation from as-deposited RuO2 to Ru metal is, obtained after annealing in forming gas (95% N2/5% H2) at 420°C for 5 min.
AB - We describe the formation of RuO2 thin films grown using atomic layer deposition (ALD) on (100) Si substrates from Ru(EtCp)2 and O2, and the subsequent influence of annealing temperature and atmosphere on the surface morphology and structure of the deposited layers. The films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). The as-deposited films consist of RuO 2 islands. No significant changes in composition or morphology are observed following annealing in N2 for 4 h at either 500 or 700°C. Higher temperature annealing in N2 (820°C, 4 h) results in some modifications to the morphology and structure where ED data indicate the formation of some Ru metal. However, complete transformation from as-deposited RuO2 to Ru metal is, obtained after annealing in forming gas (95% N2/5% H2) at 420°C for 5 min.
KW - Atomic force microscopy
KW - Atomic layer deposition
KW - Copper diffusion barriers
KW - Interconnect
KW - Ruthenium oxide
KW - Transmission electron microscopy
KW - X-ray diffraction
UR - https://www.scopus.com/pages/publications/79958138905
U2 - 10.1002/cvde.201006882
DO - 10.1002/cvde.201006882
M3 - Article
AN - SCOPUS:79958138905
SN - 0948-1907
VL - 17
SP - 114
EP - 122
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
IS - 4-6
ER -