Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes

F. Gity; V. Ahmadi; M. Noshiravani

doi:10.1016/j.sse.2006.09.012

Numerical analysis of void-induced thermal effects on GaAs/Al_xGa_1-xAs high power single-quantum-well laser diodes

F. Gity
, V. Ahmadi
, M. Noshiravani

Research output: Contribution to journal › Article › peer-review

Abstract

Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T₀) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method (FDM). This numerical model calculates the time-dependent axial variations of photon density, carrier density and temperature in semiconductor laser self-consistently. The temperature dependence of the wavelength shift and the thermal mode hopping phenomenon is also demonstrated.

Original language	English
Pages (from-to)	1767-1773
Number of pages	7
Journal	Solid-State Electronics
Volume	50
Issue number	11-12
DOIs	https://doi.org/10.1016/j.sse.2006.09.012
Publication status	Published - Nov 2006
Externally published	Yes

Keywords

Finite difference method
High power quantum well laser diode
Mode hopping
Rollover current
Solder void

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10.1016/j.sse.2006.09.012

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title = "Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes",

abstract = "Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T0) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method (FDM). This numerical model calculates the time-dependent axial variations of photon density, carrier density and temperature in semiconductor laser self-consistently. The temperature dependence of the wavelength shift and the thermal mode hopping phenomenon is also demonstrated.",

keywords = "Finite difference method, High power quantum well laser diode, Mode hopping, Rollover current, Solder void",

author = "F. Gity and V. Ahmadi and M. Noshiravani",

year = "2006",

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doi = "10.1016/j.sse.2006.09.012",

language = "English",

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journal = "Solid-State Electronics",

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AU - Gity, F.

AU - Ahmadi, V.

AU - Noshiravani, M.

PY - 2006/11

Y1 - 2006/11

N2 - Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T0) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method (FDM). This numerical model calculates the time-dependent axial variations of photon density, carrier density and temperature in semiconductor laser self-consistently. The temperature dependence of the wavelength shift and the thermal mode hopping phenomenon is also demonstrated.

AB - Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T0) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method (FDM). This numerical model calculates the time-dependent axial variations of photon density, carrier density and temperature in semiconductor laser self-consistently. The temperature dependence of the wavelength shift and the thermal mode hopping phenomenon is also demonstrated.

KW - Finite difference method

KW - High power quantum well laser diode

KW - Mode hopping

KW - Rollover current

KW - Solder void

UR - https://www.scopus.com/pages/publications/33751211252

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DO - 10.1016/j.sse.2006.09.012

M3 - Article

AN - SCOPUS:33751211252

SN - 0038-1101

VL - 50

SP - 1767

EP - 1773

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11-12

ER -

Numerical analysis of void-induced thermal effects on GaAs/Al_xGa_1-xAs high power single-quantum-well laser diodes

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Keywords

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