@inproceedings{df6cc357c9724aa09722f44363c5ac5e,
title = "Numerical simulations with energy balance model for unitraveling-carrier photodiode",
abstract = "This paper presents simulation results on modeling hot electron effects with the energy balance model in unitraveling-carrier photodiodes (UTC-PD). The simulated heterostructure has an InGaAs absorption layer with gradual doping. Results are compared with reported experimental data. They demonstrate that the RF photoresponse obtained with energy balance model is closer to the measured bandwidth than with the drift-diffusion model which underestimates the performance of the UTC-PD. The results are shown at 0V and - 1V bias voltage on the device.",
keywords = "device modeling, Energy balance, InGaAs gradual doping, unitraveling carrier photodiodes (UTC-PD)",
author = "C. Gardes and J. Justice and F. Gity and H. Yang and B. Corbett",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",
year = "2015",
doi = "10.1109/NANO.2015.7388997",
language = "English",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "350--353",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",
}