Ohmic Au-MoS2 Contacts Enabled by Re Adsorbed MoS2 Source/Drain Regions: An Ab-initio Quantum Transport Study

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

This study delves into the improved transport properties of 2D MoS2 devices with metal contacts achieved through substitutional doping or adsorbed metals. We employed ab initio techniques to thoroughly examine electronic transport behavior. The incorporation of metals into MoS2 is aimed at enhancing device performance and streamlining charge carrier transport. Our results illuminate the influence of doping on electronic and transport properties, offering valuable guidance for optimizing high-performance 2D metal contact in MoS2 electronic devices.

Original languageEnglish
Title of host publicationIEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthening the Globalization in Semiconductors, EDTM 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350371529
DOIs
Publication statusPublished - 2024
Externally publishedYes
Event8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, India
Duration: 3 Mar 20246 Mar 2024

Publication series

NameIEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

Conference

Conference8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Country/TerritoryIndia
CityBangalore
Period3/03/246/03/24

Keywords

  • and MoS2
  • Density Functional Theory
  • metal contact
  • Substitutional doping/adsorption

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