On-Chip Investigation of Phase Noise in Monolithically Integrated Gain-Switched Lasers

Phase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate equations and compared with the experimental results from monolithically integrated devices. The phase noise of a gain-switched laser is modelled both with and without injection-locking using the rate equations for a single-mode laser. Phase noise is found to increase with gain-switching, and decrease when injection-locked to a master laser. This trend is then observed experimentally on-chip with monolithically integrated devices without the use of an isolator.