On the calculation of effective electric field in In0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

A. M. Sonnet; R. V. Galatage; P. K. Hurley; E. Pelucchi; K. K. Thomas; A. Gocalinska; J. Huang; N. Goel; G. Bersuker; W. P. Kirk; C. L. Hinkle; R. M. Wallace; E. M. Vogel

doi:10.1063/1.3588255

On the calculation of effective electric field in In_0.53 Ga _0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

A. M. Sonnet
, R. V. Galatage
, P. K. Hurley
, E. Pelucchi
, K. K. Thomas
, A. Gocalinska
, J. Huang
, N. Goel
, G. Bersuker
, W. P. Kirk
, C. L. Hinkle
, R. M. Wallace
, E. M. Vogel

Research output: Contribution to journal › Article › peer-review

Abstract

The effective electron mobility of In0.53 Ga0.47 As metal-oxide- semiconductor field-effect-transistors with HfO₂ gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration.

Original language	English
Article number	193501
Journal	Applied Physics Letters
Volume	98
Issue number	19
DOIs	https://doi.org/10.1063/1.3588255
Publication status	Published - 9 May 2011

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10.1063/1.3588255

https://hdl.handle.net/10468/4322Licence: CC BY-NC-ND

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Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M., & Vogel, E. M. (2011). On the calculation of effective electric field in In_0.53 Ga _0.47 As surface channel metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 98(19), Article 193501. https://doi.org/10.1063/1.3588255

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title = "On the calculation of effective electric field in In0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors",

abstract = "The effective electron mobility of In0.53 Ga0.47 As metal-oxide- semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration.",

author = "Sonnet, \{A. M.\} and Galatage, \{R. V.\} and Hurley, \{P. K.\} and E. Pelucchi and Thomas, \{K. K.\} and A. Gocalinska and J. Huang and N. Goel and G. Bersuker and Kirk, \{W. P.\} and Hinkle, \{C. L.\} and Wallace, \{R. M.\} and Vogel, \{E. M.\}",

year = "2011",

month = may,

day = "9",

doi = "10.1063/1.3588255",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

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Sonnet, AM, Galatage, RV, Hurley, PK, Pelucchi, E, Thomas, KK, Gocalinska, A, Huang, J, Goel, N, Bersuker, G, Kirk, WP, Hinkle, CL, Wallace, RM & Vogel, EM 2011, 'On the calculation of effective electric field in In_0.53 Ga _0.47 As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, vol. 98, no. 19, 193501. https://doi.org/10.1063/1.3588255

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AU - Sonnet, A. M.

AU - Galatage, R. V.

AU - Hurley, P. K.

AU - Pelucchi, E.

AU - Thomas, K. K.

AU - Gocalinska, A.

AU - Huang, J.

AU - Goel, N.

AU - Bersuker, G.

AU - Kirk, W. P.

AU - Hinkle, C. L.

AU - Wallace, R. M.

AU - Vogel, E. M.

PY - 2011/5/9

Y1 - 2011/5/9

N2 - The effective electron mobility of In0.53 Ga0.47 As metal-oxide- semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration.

AB - The effective electron mobility of In0.53 Ga0.47 As metal-oxide- semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration.

UR - https://www.scopus.com/pages/publications/79959659394

U2 - 10.1063/1.3588255

DO - 10.1063/1.3588255

M3 - Article

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193501

ER -

On the calculation of effective electric field in In_0.53 Ga _0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

Abstract

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