@inproceedings{1f02f2db50ba406db9f76445a590c112,
title = "On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices",
abstract = "The GaN-on-Si technology for the upcoming RF/6G/mm-Wave applications requires a robust buffer design for enhanced device performance and improved reliability. The defect states present in the various layers of the buffer stack can have a detrimental impact on both the DC and the AC performance of the device, as they can interact with the 2DEG channel carriers and/or contribute to buffer leakage mechanisms. An important reliability concern is the dynamic-RON, arising from the interaction of the 2DEG channel with the defects in the buffer stack and/or the defects in the barrier layer or barrier/cap interface. In this work, an improved and more robust current transient spectroscopy technique is used to extract the time constant spectra and the activation energies of various buffer defects. A thinner GaN channel layer is shown to increase the dynamic-RON, while a specific buffer stack configuration is shown to have a considerable impact the dynamic-RON.",
keywords = "activation energy, buffer dispersion, current transient spectroscopy, dynamic-R, GaN, RF/6G applications",
author = "V. Putcha and L. Cheng and A. Alian and M. Zhao and H. Lu and B. Parvais and N. Waldron and D. Linten and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405139",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "United States",
}