@inproceedings{c97ed068cea34ce19f20d6c9b39fe3bc,
title = "On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications",
abstract = "A high gate-stack breakdown voltage is desired to enable the GaN-on-Si (MIS)HEMT device technology for upcoming RF/5G and mm-Wave applications. In this work, we show that the gate field-plate length (LGFP) has a considerable impact on the gate-stack TDDB lifetime for different gate-stack processing conditions and varying AlGaN barrier thickness. The TDDB lifetime is observed to increase with LGFP for devices suffering from high pre-stress gate-leakage, while it is observed to reduce with LGFP for devices with low gate-leakage and high RON dispersion. In devices with thinner AlGaN barrier, the higher RON dispersion results in further reduction of the TDDB lifetime. Additionally, the impact of LGFP on the TDDB lifetime is observed to reduce with thinner AlGaN barrier under similar processing conditions These results indicate a strong correlation between the gate-leakage and the barrier/cap interface properties, and their combined effect on the TDDB lifetime.",
keywords = "GaN, GaNRF reliability, Gate field-plate, MISHEMT, TDDB",
author = "Lin, \{Chien Yu\} and Vamsi Putcha and Alireza Alian and Niamh Waldron and Dimitri Linten and Nadine Collaert and Chang, \{Ting Chang\}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Integrated Reliability Workshop, IIRW 2020 ; Conference date: 04-10-2020 Through 01-11-2020",
year = "2020",
month = oct,
doi = "10.1109/IIRW49815.2020.9312857",
language = "English",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Integrated Reliability Workshop, IIRW 2020",
address = "United States",
}