On the interpretation of MOS impedance data in both series and parallel circuit topologies

E. Caruso; J. Lin; S. Monaghan; K. Cherkaoui; L. Floyd; F. Gity; P. Palestri; D. Esseni; L. Selmi; P. K. Hurley

doi:10.1016/j.sse.2021.108098

On the interpretation of MOS impedance data in both series and parallel circuit topologies

E. Caruso
, J. Lin
, S. Monaghan
, K. Cherkaoui
, L. Floyd
, F. Gity
, P. Palestri
, D. Esseni
, L. Selmi
, P. K. Hurley

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdC_S,P/dω and G_S,_P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.

Original language	English
Article number	108098
Journal	Solid-State Electronics
Volume	185
DOIs	https://doi.org/10.1016/j.sse.2021.108098
Publication status	Published - Nov 2021

Keywords

Doping
Impedance spectroscopy
Minority carrier lifetime
MOS characterization
Oxide thickness
Parameter extraction
TCAD

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10.1016/j.sse.2021.108098

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title = "On the interpretation of MOS impedance data in both series and parallel circuit topologies",

abstract = "We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.",

keywords = "Doping, Impedance spectroscopy, Minority carrier lifetime, MOS characterization, Oxide thickness, Parameter extraction, TCAD",

author = "E. Caruso and J. Lin and S. Monaghan and K. Cherkaoui and L. Floyd and F. Gity and P. Palestri and D. Esseni and L. Selmi and Hurley, \{P. K.\}",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - On the interpretation of MOS impedance data in both series and parallel circuit topologies

AU - Caruso, E.

AU - Lin, J.

AU - Monaghan, S.

AU - Cherkaoui, K.

AU - Floyd, L.

AU - Gity, F.

AU - Palestri, P.

AU - Esseni, D.

AU - Selmi, L.

AU - Hurley, P. K.

PY - 2021/11

Y1 - 2021/11

N2 - We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.

AB - We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.

KW - Doping

KW - Impedance spectroscopy

KW - Minority carrier lifetime

KW - MOS characterization

KW - Oxide thickness

KW - Parameter extraction

KW - TCAD

UR - https://www.scopus.com/pages/publications/85107918140

U2 - 10.1016/j.sse.2021.108098

DO - 10.1016/j.sse.2021.108098

M3 - Article

AN - SCOPUS:85107918140

SN - 0038-1101

VL - 185

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108098

ER -

On the interpretation of MOS impedance data in both series and parallel circuit topologies

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Keywords

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