TY - GEN
T1 - On the remarkable morphological organization of homoepitaxial MOVPE InP films
AU - Gocalinska, A.
AU - Manganaro, M.
AU - Pelucchi, E.
PY - 2011
Y1 - 2011
N2 - Here we present a systematic study of the morphology of MOVPE grown homoepitaxial indium phosphide films by means of Atomic Force Microscopy. Single layers of InP grown on (001) vicinal surfaces in temperature range spanning across 200 °C were investigated with focus drawn to the behaviour of crystallographic steps on the sample surfaces in respect to the growth conditions and substrate misorientation. Direct comparison of several different surface organizations is shown, providing arguments for careful selection of the growth parameters while optimising the design for more complex structures.
AB - Here we present a systematic study of the morphology of MOVPE grown homoepitaxial indium phosphide films by means of Atomic Force Microscopy. Single layers of InP grown on (001) vicinal surfaces in temperature range spanning across 200 °C were investigated with focus drawn to the behaviour of crystallographic steps on the sample surfaces in respect to the growth conditions and substrate misorientation. Direct comparison of several different surface organizations is shown, providing arguments for careful selection of the growth parameters while optimising the design for more complex structures.
UR - https://www.scopus.com/pages/publications/84858251446
M3 - Conference proceeding
AN - SCOPUS:84858251446
SN - 9781457717536
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Y2 - 22 May 2011 through 26 May 2011
ER -