Abstract
Titanium oxide thin films were prepared by a d.c. sputtering technique onto glass substrates. The morphology of the films was analysed by atomic force microscopy and their structure by X-ray diffraction. The structure and phase composition of the films depend on the deposition conditions. The small values for roughness obtained from AFM, ranging from 3 to 9 nm, show relatively smooth surfaces. Temperature dependences of the electrical conductivities were studied in a wide range, 13-560 K. The values of activation energies of electrical conduction, calculated from the temperature dependences of the electrical conductivity, varied between 0.13 and 0.39 eV, for temperature range 310-468 K. The current-voltage characteristics are ohmic for values of applied voltage lower than 0.5 V. For higher values, the mechanism of electrical conduction is determined by space-charge-limited currents.
| Original language | English |
|---|---|
| Pages (from-to) | 468-472 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 507-510 |
| DOIs | |
| Publication status | Published - Jun 2002 |
| Externally published | Yes |
Keywords
- Atomic force microscopy
- Electrical transport measurements
- Polycrystalline thin films
- Semiconducting films
- Titanium oxide