On the switching mechanism and optimisation of ion irradiation enabled 2D MoS2 memristors

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@article{73bcf0970fd14bb59841a313077cef36,

title = "On the switching mechanism and optimisation of ion irradiation enabled 2D MoS2 memristors",

author = "Samuel Aldana and Jakub Jadwiszczak and Hongzhou Zhang",

year = "2023",

month = mar,

day = "13",

doi = "10.1039/D2NR06810A",

language = "English",

volume = "15",

pages = "6408--6416",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

}

TY - JOUR

T1 - On the switching mechanism and optimisation of ion irradiation enabled 2D MoS2 memristors

AU - Aldana, Samuel

AU - Jadwiszczak, Jakub

AU - Zhang, Hongzhou

PY - 2023/3/13

Y1 - 2023/3/13

UR - https://doi.org/10.1039/D2NR06810A

U2 - 10.1039/D2NR06810A

DO - 10.1039/D2NR06810A

M3 - Article

SN - 2040-3364

VL - 15

SP - 6408

EP - 6416

JO - Nanoscale

JF - Nanoscale

ER -