Optical and electrical characterization of hafnium oxide deposited by MOCVD

Y. Lu; O. Buiu; S. Hall; P. K. Hurley

doi:10.1016/j.microrel.2004.11.015

Optical and electrical characterization of hafnium oxide deposited by MOCVD

Y. Lu
, O. Buiu
, S. Hall
, P. K. Hurley

University of Liverpool

Research output: Contribution to journal › Article › peer-review

Abstract

The paper reports on electrical and optical investigations performed on HfO₂ high-k films deposited by Metal-organic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO₂ and the silicon substrate, which can be optically modelled as a mixture of Si and SiO₂; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be ∼0.7 eV.

Original language	English
Pages (from-to)	965-968
Number of pages	4
Journal	Microelectronics Reliability
Volume	45
Issue number	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.11.015
Publication status	Published - May 2005

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10.1016/j.microrel.2004.11.015

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@article{5b2a74c6a69b47378ab2e7df9b8d60f9,

title = "Optical and electrical characterization of hafnium oxide deposited by MOCVD",

abstract = "The paper reports on electrical and optical investigations performed on HfO2 high-k films deposited by Metal-organic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO2 and the silicon substrate, which can be optically modelled as a mixture of Si and SiO2; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be ∼0.7 eV.",

author = "Y. Lu and O. Buiu and S. Hall and \{K. Hurley\}, P.",

year = "2005",

month = may,

doi = "10.1016/j.microrel.2004.11.015",

language = "English",

volume = "45",

pages = "965--968",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "5-6",

}

TY - JOUR

T1 - Optical and electrical characterization of hafnium oxide deposited by MOCVD

AU - Lu, Y.

AU - Buiu, O.

AU - Hall, S.

AU - K. Hurley, P.

PY - 2005/5

Y1 - 2005/5

N2 - The paper reports on electrical and optical investigations performed on HfO2 high-k films deposited by Metal-organic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO2 and the silicon substrate, which can be optically modelled as a mixture of Si and SiO2; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be ∼0.7 eV.

AB - The paper reports on electrical and optical investigations performed on HfO2 high-k films deposited by Metal-organic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO2 and the silicon substrate, which can be optically modelled as a mixture of Si and SiO2; this information is further used in the assessment of the electrical measurements. Hysteresis effects have been observed in the Capacitance-Voltage (C-V) measurements for the as-deposited sample as well as the annealed samples. For the samples with large hysteresis, Poole-Frenkel (PF) conduction is the most likely dominant conduction mechanism. The energy of dominant trap level was found to be ∼0.7 eV.

UR - https://www.scopus.com/pages/publications/14644435802

U2 - 10.1016/j.microrel.2004.11.015

DO - 10.1016/j.microrel.2004.11.015

M3 - Article

AN - SCOPUS:14644435802

SN - 0026-2714

VL - 45

SP - 965

EP - 968

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5-6

ER -

Optical and electrical characterization of hafnium oxide deposited by MOCVD

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