Optical and electrical properties of LPCVD silicon oxynitride films on silicon

A. Szekeres; S. Alexandrova; M. Modreanu; P. Cosmin; M. Gartner

doi:10.1016/S0042-207X(00)00479-6

Optical and electrical properties of LPCVD silicon oxynitride films on silicon

A. Szekeres
, S. Alexandrova
, M. Modreanu
, P. Cosmin
, M. Gartner

Research output: Contribution to journal › Article › peer-review

Abstract

The optical and electrical properties of SiO_xN_y films prepared by low-pressure (5.3 mbar) chemical vapour deposition (LPCVD) at 860°C were studied by means of spectroscopic ellipsometry and analysis of 1 MHz capacitance-voltage characteristics. Correlation of the refractive index and dielectric permittivity of LPCVD films and their composition with the increase of nitrous oxide content in the deposition ambient is established. The density of the effective dielectric charges and interface traps reduces with nitridation of the films. The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiO_xN_y/Si interface which leads to suppression of interface trap generation.

Original language	English
Pages (from-to)	205-209
Number of pages	5
Journal	Vacuum
Volume	61
Issue number	2-4
DOIs	https://doi.org/10.1016/S0042-207X(00)00479-6
Publication status	Published - 14 May 2001
Externally published	Yes
Event	8th Joint Vaccum Conference of Croatia, Austria, Slovenia, Hungary - Pule, Croatia Duration: 4 Jun 2000 → 9 Jun 2000

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Cite this

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title = "Optical and electrical properties of LPCVD silicon oxynitride films on silicon",

abstract = "The optical and electrical properties of SiOxNy films prepared by low-pressure (5.3 mbar) chemical vapour deposition (LPCVD) at 860°C were studied by means of spectroscopic ellipsometry and analysis of 1 MHz capacitance-voltage characteristics. Correlation of the refractive index and dielectric permittivity of LPCVD films and their composition with the increase of nitrous oxide content in the deposition ambient is established. The density of the effective dielectric charges and interface traps reduces with nitridation of the films. The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of interface trap generation.",

author = "A. Szekeres and S. Alexandrova and M. Modreanu and P. Cosmin and M. Gartner",

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doi = "10.1016/S0042-207X(00)00479-6",

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journal = "Vacuum",

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TY - JOUR

T1 - Optical and electrical properties of LPCVD silicon oxynitride films on silicon

AU - Szekeres, A.

AU - Alexandrova, S.

AU - Modreanu, M.

AU - Cosmin, P.

AU - Gartner, M.

PY - 2001/5/14

Y1 - 2001/5/14

N2 - The optical and electrical properties of SiOxNy films prepared by low-pressure (5.3 mbar) chemical vapour deposition (LPCVD) at 860°C were studied by means of spectroscopic ellipsometry and analysis of 1 MHz capacitance-voltage characteristics. Correlation of the refractive index and dielectric permittivity of LPCVD films and their composition with the increase of nitrous oxide content in the deposition ambient is established. The density of the effective dielectric charges and interface traps reduces with nitridation of the films. The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of interface trap generation.

AB - The optical and electrical properties of SiOxNy films prepared by low-pressure (5.3 mbar) chemical vapour deposition (LPCVD) at 860°C were studied by means of spectroscopic ellipsometry and analysis of 1 MHz capacitance-voltage characteristics. Correlation of the refractive index and dielectric permittivity of LPCVD films and their composition with the increase of nitrous oxide content in the deposition ambient is established. The density of the effective dielectric charges and interface traps reduces with nitridation of the films. The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of interface trap generation.

UR - https://www.scopus.com/pages/publications/0035858492

U2 - 10.1016/S0042-207X(00)00479-6

DO - 10.1016/S0042-207X(00)00479-6

M3 - Article

AN - SCOPUS:0035858492

SN - 0042-207X

VL - 61

SP - 205

EP - 209

JO - Vacuum

JF - Vacuum

IS - 2-4

T2 - 8th Joint Vaccum Conference of Croatia, Austria, Slovenia, Hungary

Y2 - 4 June 2000 through 9 June 2000

ER -

Optical and electrical properties of LPCVD silicon oxynitride films on silicon

Abstract

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