Optical and microstructural studies of InGaN/GaN quantum dot ensembles

S. C. Davies; D. J. Mowbray; F. Ranalli; P. J. Parbrook; Q. Wang; T. Wang; B. S. Yea; B. J. Sherliker; M. P. Halsall; R. J. Kashtiban; U. Bangert

doi:10.1063/1.3226645

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

S. C. Davies
, D. J. Mowbray
, F. Ranalli
, P. J. Parbrook
, Q. Wang
, T. Wang
, B. S. Yea
, B. J. Sherliker
, M. P. Halsall
, R. J. Kashtiban
, U. Bangert

Research output: Contribution to journal › Article › peer-review

Abstract

An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

Original language	English
Article number	111903
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3226645
Publication status	Published - 2009

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10.1063/1.3226645

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title = "Optical and microstructural studies of InGaN/GaN quantum dot ensembles",

abstract = "An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.",

author = "Davies, \{S. C.\} and Mowbray, \{D. J.\} and F. Ranalli and Parbrook, \{P. J.\} and Q. Wang and T. Wang and Yea, \{B. S.\} and Sherliker, \{B. J.\} and Halsall, \{M. P.\} and Kashtiban, \{R. J.\} and U. Bangert",

year = "2009",

doi = "10.1063/1.3226645",

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volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Optical and microstructural studies of InGaN/GaN quantum dot ensembles

AU - Davies, S. C.

AU - Mowbray, D. J.

AU - Ranalli, F.

AU - Parbrook, P. J.

AU - Wang, Q.

AU - Wang, T.

AU - Yea, B. S.

AU - Sherliker, B. J.

AU - Halsall, M. P.

AU - Kashtiban, R. J.

AU - Bangert, U.

PY - 2009

Y1 - 2009

N2 - An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

AB - An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.

UR - https://www.scopus.com/pages/publications/70349512346

U2 - 10.1063/1.3226645

DO - 10.1063/1.3226645

M3 - Article

AN - SCOPUS:70349512346

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111903

ER -

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

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