Optical and structural characterization of thin MoS2layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics

Bienlo Zerbo; Mircea Modreanu; Ian Povey; Antoine Letoublon; Alain Rolland; Laurent Pedesseau; Jacky Even; Bruno Lepine; Pascal Turban; Philippe Schieffer; Alain Moreac; Olivier Durand

doi:10.1109/CAS52836.2021.9604140

Optical and structural characterization of thin MoS₂layers on SiO₂/Si substrates, towards the development of MoS₂/Si heterojunction photovoltaics

Bienlo Zerbo
, Mircea Modreanu
, Ian Povey
, Antoine Letoublon
, Alain Rolland
, Laurent Pedesseau
, Jacky Even
, Bruno Lepine
, Pascal Turban
, Philippe Schieffer
, Alain Moreac
, Olivier Durand

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A focus is made here on the optimization of the MoS2 material and its deposition process, through preliminary optical and structural characterizations of thin 2H-MoS2 layers deposited on 80nm SiO2 on top of Si (001) substrates. Our investigations revealed oxidation of the MoS2 layers, and limited longitudinal crystallite size, which may strongly affect the band lineup between MoS2 and Si, and thus, the performance of the solar cell.

Original language	English
Title of host publication	2021 International Semiconductor Conference, CAS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	151-154
Number of pages	4
ISBN (Electronic)	9781665435710
DOIs	https://doi.org/10.1109/CAS52836.2021.9604140
Publication status	Published - 2021
Event	44th International Semiconductor Conference, CAS 2021 - Virtual, Online, Romania Duration: 6 Oct 2021 → 8 Oct 2021

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	2021-October

Conference

Conference	44th International Semiconductor Conference, CAS 2021
Country/Territory	Romania
City	Virtual, Online
Period	6/10/21 → 8/10/21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/CAS52836.2021.9604140

Cite this

Zerbo, B., Modreanu, M., Povey, I., Letoublon, A., Rolland, A., Pedesseau, L., Even, J., Lepine, B., Turban, P., Schieffer, P., Moreac, A., & Durand, O. (2021). Optical and structural characterization of thin MoS₂layers on SiO₂/Si substrates, towards the development of MoS₂/Si heterojunction photovoltaics. In 2021 International Semiconductor Conference, CAS 2021 (pp. 151-154). (Proceedings of the International Semiconductor Conference, CAS; Vol. 2021-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CAS52836.2021.9604140

Zerbo, Bienlo ; Modreanu, Mircea ; Povey, Ian et al. / Optical and structural characterization of thin MoS₂layers on SiO₂/Si substrates, towards the development of MoS₂/Si heterojunction photovoltaics. 2021 International Semiconductor Conference, CAS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 151-154 (Proceedings of the International Semiconductor Conference, CAS).

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title = "Optical and structural characterization of thin MoS2layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics",

abstract = "In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A focus is made here on the optimization of the MoS2 material and its deposition process, through preliminary optical and structural characterizations of thin 2H-MoS2 layers deposited on 80nm SiO2 on top of Si (001) substrates. Our investigations revealed oxidation of the MoS2 layers, and limited longitudinal crystallite size, which may strongly affect the band lineup between MoS2 and Si, and thus, the performance of the solar cell.",

author = "Bienlo Zerbo and Mircea Modreanu and Ian Povey and Antoine Letoublon and Alain Rolland and Laurent Pedesseau and Jacky Even and Bruno Lepine and Pascal Turban and Philippe Schieffer and Alain Moreac and Olivier Durand",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 44th International Semiconductor Conference, CAS 2021 ; Conference date: 06-10-2021 Through 08-10-2021",

year = "2021",

doi = "10.1109/CAS52836.2021.9604140",

language = "English",

series = "Proceedings of the International Semiconductor Conference, CAS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Zerbo, B, Modreanu, M , Povey, I, Letoublon, A, Rolland, A, Pedesseau, L, Even, J, Lepine, B, Turban, P, Schieffer, P, Moreac, A & Durand, O 2021, Optical and structural characterization of thin MoS₂layers on SiO₂/Si substrates, towards the development of MoS₂/Si heterojunction photovoltaics. in 2021 International Semiconductor Conference, CAS 2021. Proceedings of the International Semiconductor Conference, CAS, vol. 2021-October, Institute of Electrical and Electronics Engineers Inc., pp. 151-154, 44th International Semiconductor Conference, CAS 2021, Virtual, Online, Romania, 6/10/21. https://doi.org/10.1109/CAS52836.2021.9604140

Optical and structural characterization of thin MoS₂layers on SiO₂/Si substrates, towards the development of MoS₂/Si heterojunction photovoltaics. / Zerbo, Bienlo; Modreanu, Mircea ; Povey, Ian et al.
2021 International Semiconductor Conference, CAS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 151-154 (Proceedings of the International Semiconductor Conference, CAS; Vol. 2021-October).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Zerbo, Bienlo

AU - Modreanu, Mircea

AU - Povey, Ian

AU - Letoublon, Antoine

AU - Rolland, Alain

AU - Pedesseau, Laurent

AU - Even, Jacky

AU - Lepine, Bruno

AU - Turban, Pascal

AU - Schieffer, Philippe

AU - Moreac, Alain

AU - Durand, Olivier

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AB - In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A focus is made here on the optimization of the MoS2 material and its deposition process, through preliminary optical and structural characterizations of thin 2H-MoS2 layers deposited on 80nm SiO2 on top of Si (001) substrates. Our investigations revealed oxidation of the MoS2 layers, and limited longitudinal crystallite size, which may strongly affect the band lineup between MoS2 and Si, and thus, the performance of the solar cell.

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BT - 2021 International Semiconductor Conference, CAS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 6 October 2021 through 8 October 2021

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Zerbo B, Modreanu M , Povey I, Letoublon A, Rolland A, Pedesseau L et al. Optical and structural characterization of thin MoS₂layers on SiO₂/Si substrates, towards the development of MoS₂/Si heterojunction photovoltaics. In 2021 International Semiconductor Conference, CAS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 151-154. (Proceedings of the International Semiconductor Conference, CAS). doi: 10.1109/CAS52836.2021.9604140