Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells

S. T. Pendlebury; P. Lynam; D. J. Mowbray; P. J. Parbrook; D. A. Wood; M. Lada; J. P. O'Neill; A. G. Cullis; M. S. Skolnick

doi:10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3

Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells

S. T. Pendlebury
, P. Lynam
, D. J. Mowbray
, P. J. Parbrook
, D. A. Wood
, M. Lada
, J. P. O'Neill
, A. G. Cullis
, M. S. Skolnick

Research output: Contribution to journal › Article › peer-review

Abstract

We report optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells, grown by metalorganic vapour phase epitaxy on sapphire substrates. A combination of emission (photoluminescence) and absorption (photoluminescence excitation) spectroscopy provides information on the nature of the electronic states and on built-in electric fields resulting from piezoelectric and spontaneous polarisation effects. These fields are found to be considerably smaller than in previously reported work on similar structures.

Original language	English
Pages (from-to)	871-875
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3
Publication status	Published - Nov 2001
Externally published	Yes

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10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3

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@article{15928fc6d1d14be489f8d7f6c35cef53,

title = "Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells",

abstract = "We report optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells, grown by metalorganic vapour phase epitaxy on sapphire substrates. A combination of emission (photoluminescence) and absorption (photoluminescence excitation) spectroscopy provides information on the nature of the electronic states and on built-in electric fields resulting from piezoelectric and spontaneous polarisation effects. These fields are found to be considerably smaller than in previously reported work on similar structures.",

author = "Pendlebury, \{S. T.\} and P. Lynam and Mowbray, \{D. J.\} and Parbrook, \{P. J.\} and Wood, \{D. A.\} and M. Lada and O'Neill, \{J. P.\} and Cullis, \{A. G.\} and Skolnick, \{M. S.\}",

year = "2001",

month = nov,

doi = "10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3",

language = "English",

volume = "188",

pages = "871--875",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells

AU - Pendlebury, S. T.

AU - Lynam, P.

AU - Mowbray, D. J.

AU - Parbrook, P. J.

AU - Wood, D. A.

AU - Lada, M.

AU - O'Neill, J. P.

AU - Cullis, A. G.

AU - Skolnick, M. S.

PY - 2001/11

Y1 - 2001/11

N2 - We report optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells, grown by metalorganic vapour phase epitaxy on sapphire substrates. A combination of emission (photoluminescence) and absorption (photoluminescence excitation) spectroscopy provides information on the nature of the electronic states and on built-in electric fields resulting from piezoelectric and spontaneous polarisation effects. These fields are found to be considerably smaller than in previously reported work on similar structures.

AB - We report optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells, grown by metalorganic vapour phase epitaxy on sapphire substrates. A combination of emission (photoluminescence) and absorption (photoluminescence excitation) spectroscopy provides information on the nature of the electronic states and on built-in electric fields resulting from piezoelectric and spontaneous polarisation effects. These fields are found to be considerably smaller than in previously reported work on similar structures.

UR - https://www.scopus.com/pages/publications/1842786141

U2 - 10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3

DO - 10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3

M3 - Article

AN - SCOPUS:1842786141

SN - 0031-8965

VL - 188

SP - 871

EP - 875

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells

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