Optical characterization of dielectric borophosphosilicate glass

Mariuca Gartner; M. Modreanu; S. Bosch; T. Stoica

doi:10.1016/s0026-2714(99)00291-7

Optical characterization of dielectric borophosphosilicate glass

Mariuca Gartner
, M. Modreanu
, S. Bosch
, T. Stoica

Institute of Physical Chemistry
National Institute for Research and Development in Microtechnologies Romania
University of Barcelona
Institut de Physique des Materiaux, Bucarest-Magurele

Research output: Contribution to journal › Article › peer-review

Abstract

Atmospheric pressure chemical vapour deposition films of borophosphosilicate glass with different contents of phosphorus and boron can be successfully used as masks for etching of silicon in KOH solution. The optical properties of these films were pointed out by spectroellipsometric measurements, using different theoretical models (such as Cauchy and Wemple-DiDomenico models).

Original language	English
Pages (from-to)	617-620
Number of pages	4
Journal	Microelectronics Reliability
Volume	40
Issue number	4-5
DOIs	https://doi.org/10.1016/s0026-2714(99)00291-7
Publication status	Published - 1 Apr 2000
Externally published	Yes

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10.1016/s0026-2714(99)00291-7

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title = "Optical characterization of dielectric borophosphosilicate glass",

abstract = "Atmospheric pressure chemical vapour deposition films of borophosphosilicate glass with different contents of phosphorus and boron can be successfully used as masks for etching of silicon in KOH solution. The optical properties of these films were pointed out by spectroellipsometric measurements, using different theoretical models (such as Cauchy and Wemple-DiDomenico models).",

author = "Mariuca Gartner and M. Modreanu and S. Bosch and T. Stoica",

year = "2000",

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doi = "10.1016/s0026-2714(99)00291-7",

language = "English",

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journal = "Microelectronics Reliability",

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T1 - Optical characterization of dielectric borophosphosilicate glass

AU - Gartner, Mariuca

AU - Modreanu, M.

AU - Bosch, S.

AU - Stoica, T.

PY - 2000/4/1

Y1 - 2000/4/1

N2 - Atmospheric pressure chemical vapour deposition films of borophosphosilicate glass with different contents of phosphorus and boron can be successfully used as masks for etching of silicon in KOH solution. The optical properties of these films were pointed out by spectroellipsometric measurements, using different theoretical models (such as Cauchy and Wemple-DiDomenico models).

AB - Atmospheric pressure chemical vapour deposition films of borophosphosilicate glass with different contents of phosphorus and boron can be successfully used as masks for etching of silicon in KOH solution. The optical properties of these films were pointed out by spectroellipsometric measurements, using different theoretical models (such as Cauchy and Wemple-DiDomenico models).

UR - https://www.scopus.com/pages/publications/0033741015

U2 - 10.1016/s0026-2714(99)00291-7

DO - 10.1016/s0026-2714(99)00291-7

M3 - Article

AN - SCOPUS:0033741015

SN - 0026-2714

VL - 40

SP - 617

EP - 620

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4-5

ER -

Optical characterization of dielectric borophosphosilicate glass

Abstract

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