Optical characterization of high-k dielectrics HfO2 thin films obtained by MOCVD

M. Modreanu; P. K. Hurley; B. J. O'Sullivan; B. O'Looney; J. P. Senateur; H. Rousell; F. Rousell; M. Audier; C. Dubourdieu; I. W. Boyd; Q. Fang; T. L. Leedham; S. Rushworth; A. C. Jones; H. Davies; C. Jimenez

doi:10.1117/12.463984

Optical characterization of high-k dielectrics HfO₂ thin films obtained by MOCVD

M. Modreanu
, P. K. Hurley
, B. J. O'Sullivan
, B. O'Looney
, J. P. Senateur
, H. Rousell
, F. Rousell
, M. Audier
, C. Dubourdieu
, I. W. Boyd
, Q. Fang
, T. L. Leedham
, S. Rushworth
, A. C. Jones
, H. Davies
, C. Jimenez

Research output: Contribution to journal › Article › peer-review

Abstract

The optical properties of a set of high-k dielectrics HfO₂ thin films obtained by two different modified metal organic chemical vapour deposition (MOCVD) techniques were studied using spectroscopic ellipsometry (SE). HfO₂ thin films with thickness varying from 10-40 nm were formed over a range of temperatures (300-425°C). After deposition the sample were annealed by Rapid Thermal Annealing (RTP) at 800°C in an oxygen/argon ambient and UV annealing at 400°C in oxygen. The films were analysed physically using XRD and FTIR. The XRD results show that as-deposited HfO₂ films microstructure strongly depends on deposition temperature. Both polycrystalline (T>365°C) and amorphous films (T<320°C) were formed. The polycrystalline structure is identified as monoclinic. The SE results demonstrate that as-deposited amorphous HfO₂ thin films have a high degree of porosity. After annealing at 800°C in oxygen and in nitrogen ambient, due to the solid phase crystallisation, as-deposited amorphous HfO₂ thin films become crystalline and the film porosities are strongly reduced. In addition, an increase of the refractive index and a decrease of the film thickness are also obtained. Optical properties of the as-deposited polycrystalline HfO₂ are also improved after annealing and an increase of the refractive index and a decrease of the film thickness is also obtained.

Original language	English
Pages (from-to)	1236-1246
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4876
Issue number	2
DOIs	https://doi.org/10.1117/12.463984
Publication status	Published - 2002
Event	Opto-Ireland 2002: Optics and Photonics Technologies and Applications - Galway, Ireland Duration: 5 Sep 2002 → 6 Sep 2002

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Modreanu, M., Hurley, P. K., O'Sullivan, B. J., O'Looney, B., Senateur, J. P., Rousell, H., Rousell, F., Audier, M., Dubourdieu, C., Boyd, I. W., Fang, Q., Leedham, T. L., Rushworth, S., Jones, A. C., Davies, H., & Jimenez, C. (2002). Optical characterization of high-k dielectrics HfO₂ thin films obtained by MOCVD. Proceedings of SPIE - The International Society for Optical Engineering, 4876(2), 1236-1246. https://doi.org/10.1117/12.463984

@article{65d77183fc2e4e969353e95a8deac0d0,

title = "Optical characterization of high-k dielectrics HfO2 thin films obtained by MOCVD",

abstract = "The optical properties of a set of high-k dielectrics HfO2 thin films obtained by two different modified metal organic chemical vapour deposition (MOCVD) techniques were studied using spectroscopic ellipsometry (SE). HfO2 thin films with thickness varying from 10-40 nm were formed over a range of temperatures (300-425°C). After deposition the sample were annealed by Rapid Thermal Annealing (RTP) at 800°C in an oxygen/argon ambient and UV annealing at 400°C in oxygen. The films were analysed physically using XRD and FTIR. The XRD results show that as-deposited HfO2 films microstructure strongly depends on deposition temperature. Both polycrystalline (T>365°C) and amorphous films (T<320°C) were formed. The polycrystalline structure is identified as monoclinic. The SE results demonstrate that as-deposited amorphous HfO2 thin films have a high degree of porosity. After annealing at 800°C in oxygen and in nitrogen ambient, due to the solid phase crystallisation, as-deposited amorphous HfO2 thin films become crystalline and the film porosities are strongly reduced. In addition, an increase of the refractive index and a decrease of the film thickness are also obtained. Optical properties of the as-deposited polycrystalline HfO2 are also improved after annealing and an increase of the refractive index and a decrease of the film thickness is also obtained.",

author = "M. Modreanu and Hurley, \{P. K.\} and O'Sullivan, \{B. J.\} and B. O'Looney and Senateur, \{J. P.\} and H. Rousell and F. Rousell and M. Audier and C. Dubourdieu and Boyd, \{I. W.\} and Q. Fang and Leedham, \{T. L.\} and S. Rushworth and Jones, \{A. C.\} and H. Davies and C. Jimenez",

year = "2002",

doi = "10.1117/12.463984",

language = "English",

volume = "4876",

pages = "1236--1246",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "2",

note = "Opto-Ireland 2002: Optics and Photonics Technologies and Applications ; Conference date: 05-09-2002 Through 06-09-2002",

}

Modreanu, M , Hurley, PK, O'Sullivan, BJ, O'Looney, B, Senateur, JP, Rousell, H, Rousell, F, Audier, M, Dubourdieu, C, Boyd, IW, Fang, Q, Leedham, TL, Rushworth, S, Jones, AC, Davies, H & Jimenez, C 2002, 'Optical characterization of high-k dielectrics HfO₂ thin films obtained by MOCVD', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4876, no. 2, pp. 1236-1246. https://doi.org/10.1117/12.463984

TY - JOUR

T1 - Optical characterization of high-k dielectrics HfO2 thin films obtained by MOCVD

AU - Modreanu, M.

AU - Hurley, P. K.

AU - O'Sullivan, B. J.

AU - O'Looney, B.

AU - Senateur, J. P.

AU - Rousell, H.

AU - Rousell, F.

AU - Audier, M.

AU - Dubourdieu, C.

AU - Boyd, I. W.

AU - Fang, Q.

AU - Leedham, T. L.

AU - Rushworth, S.

AU - Jones, A. C.

AU - Davies, H.

AU - Jimenez, C.

PY - 2002

Y1 - 2002

N2 - The optical properties of a set of high-k dielectrics HfO2 thin films obtained by two different modified metal organic chemical vapour deposition (MOCVD) techniques were studied using spectroscopic ellipsometry (SE). HfO2 thin films with thickness varying from 10-40 nm were formed over a range of temperatures (300-425°C). After deposition the sample were annealed by Rapid Thermal Annealing (RTP) at 800°C in an oxygen/argon ambient and UV annealing at 400°C in oxygen. The films were analysed physically using XRD and FTIR. The XRD results show that as-deposited HfO2 films microstructure strongly depends on deposition temperature. Both polycrystalline (T>365°C) and amorphous films (T<320°C) were formed. The polycrystalline structure is identified as monoclinic. The SE results demonstrate that as-deposited amorphous HfO2 thin films have a high degree of porosity. After annealing at 800°C in oxygen and in nitrogen ambient, due to the solid phase crystallisation, as-deposited amorphous HfO2 thin films become crystalline and the film porosities are strongly reduced. In addition, an increase of the refractive index and a decrease of the film thickness are also obtained. Optical properties of the as-deposited polycrystalline HfO2 are also improved after annealing and an increase of the refractive index and a decrease of the film thickness is also obtained.

AB - The optical properties of a set of high-k dielectrics HfO2 thin films obtained by two different modified metal organic chemical vapour deposition (MOCVD) techniques were studied using spectroscopic ellipsometry (SE). HfO2 thin films with thickness varying from 10-40 nm were formed over a range of temperatures (300-425°C). After deposition the sample were annealed by Rapid Thermal Annealing (RTP) at 800°C in an oxygen/argon ambient and UV annealing at 400°C in oxygen. The films were analysed physically using XRD and FTIR. The XRD results show that as-deposited HfO2 films microstructure strongly depends on deposition temperature. Both polycrystalline (T>365°C) and amorphous films (T<320°C) were formed. The polycrystalline structure is identified as monoclinic. The SE results demonstrate that as-deposited amorphous HfO2 thin films have a high degree of porosity. After annealing at 800°C in oxygen and in nitrogen ambient, due to the solid phase crystallisation, as-deposited amorphous HfO2 thin films become crystalline and the film porosities are strongly reduced. In addition, an increase of the refractive index and a decrease of the film thickness are also obtained. Optical properties of the as-deposited polycrystalline HfO2 are also improved after annealing and an increase of the refractive index and a decrease of the film thickness is also obtained.

UR - https://www.scopus.com/pages/publications/0042231963

U2 - 10.1117/12.463984

DO - 10.1117/12.463984

M3 - Article

AN - SCOPUS:0042231963

SN - 0277-786X

VL - 4876

SP - 1236

EP - 1246

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 2

T2 - Opto-Ireland 2002: Optics and Photonics Technologies and Applications

Y2 - 5 September 2002 through 6 September 2002

ER -

Optical characterization of high-k dielectrics HfO₂ thin films obtained by MOCVD

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