Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

E. Aperathitis; M. Modreanu; M. Bender; V. Cimalla; G. Ecke; M. Androulidaki; N. Pelekanos

doi:10.1016/j.tsf.2003.10.046

Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

E. Aperathitis
, M. Modreanu
, M. Bender
, V. Cimalla
, G. Ecke
, M. Androulidaki
, N. Pelekanos

Research output: Contribution to journal › Article › peer-review

Abstract

Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N₂ and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing.

Original language	English
Pages (from-to)	101-104
Number of pages	4
Journal	Thin Solid Films
Volume	450
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2003.10.046
Publication status	Published - 22 Feb 2004
Event	Proceedings of Symposium M on Optical and X-Ray Metrology - Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

Conductivity
Indium tin oxide
Nitrides
Optical properties
Sputtering
Structural properties

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10.1016/j.tsf.2003.10.046

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title = "Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering",

abstract = "Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N2 and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing.",

keywords = "Conductivity, Indium tin oxide, Nitrides, Optical properties, Sputtering, Structural properties",

author = "E. Aperathitis and M. Modreanu and M. Bender and V. Cimalla and G. Ecke and M. Androulidaki and N. Pelekanos",

year = "2004",

month = feb,

day = "22",

doi = "10.1016/j.tsf.2003.10.046",

language = "English",

volume = "450",

pages = "101--104",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of Symposium M on Optical and X-Ray Metrology ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

AU - Aperathitis, E.

AU - Modreanu, M.

AU - Bender, M.

AU - Cimalla, V.

AU - Ecke, G.

AU - Androulidaki, M.

AU - Pelekanos, N.

PY - 2004/2/22

Y1 - 2004/2/22

N2 - Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N2 and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing.

AB - Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N2 and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing.

KW - Conductivity

KW - Indium tin oxide

KW - Nitrides

KW - Optical properties

KW - Sputtering

KW - Structural properties

UR - https://www.scopus.com/pages/publications/1142267510

U2 - 10.1016/j.tsf.2003.10.046

DO - 10.1016/j.tsf.2003.10.046

M3 - Article

AN - SCOPUS:1142267510

SN - 0040-6090

VL - 450

SP - 101

EP - 104

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of Symposium M on Optical and X-Ray Metrology

Y2 - 10 June 2003 through 13 June 2003

ER -

Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

Abstract

Keywords

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