TY - JOUR
T1 - Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering
AU - Koufaki, M.
AU - Sifakis, M.
AU - Iliopoulos, E.
AU - Pelekanos, N.
AU - Modreanu, M.
AU - Cimalla, V.
AU - Ecke, G.
AU - Aperathitis, E.
PY - 2006/10/31
Y1 - 2006/10/31
N2 - Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure.
AB - Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure.
KW - Indium-tin-oxide (ITO)
KW - Optical emission spectroscopy (OES)
KW - Oxynitrides
KW - Rf-sputtering
UR - https://www.scopus.com/pages/publications/33750497851
U2 - 10.1016/j.apsusc.2006.06.023
DO - 10.1016/j.apsusc.2006.06.023
M3 - Article
AN - SCOPUS:33750497851
SN - 0169-4332
VL - 253
SP - 405
EP - 408
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1 SPEC. ISS.
ER -