Optical gain in GaAsBi/GaAs quantum well diode lasers

  • Igor P. Marko
  • , Christopher A. Broderick
  • , Shirong Jin
  • , Peter Ludewig
  • , Wolfgang Stolz
  • , Kerstin Volz
  • , Judy M. Rorison
  • , Eoin P. O'Reilly
  • , Stephen J. Sweeney

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

Optical gain, absorption and spontaneous emission spectra for GaAs0.978Bi0.022/GaAs laser diodes are measured experimentally and compared with theory. Internal optical losses of 10-15 cm-1 and peak modal gain of 24 cm-1 are measured at threshold. The results of calculations showed excellent agreement with the experiment, key for future laser design.

Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
Publication statusPublished - 2 Dec 2016
Externally publishedYes
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: 12 Sep 201615 Sep 2016

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Conference

Conference2016 International Semiconductor Laser Conference, ISLC 2016
Country/TerritoryJapan
CityKobe
Period12/09/1615/09/16

Keywords

  • absorption spectra
  • bismides
  • GaAsBi
  • laser diode
  • optical gain
  • quantum well
  • spontaneous emission

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