Optical gain spectra and laser action of InGaN/GaN MQWs grown on silicon at pumping by femtosecond pulses

  • A. V. Danilchyk
  • , E. V. Lutsenko
  • , V. Z. Zubialevich
  • , V. N. Pavlovskii
  • , G. P. Yablonskii
  • , B. SCHlNELLER
  • , M. Heuken
  • , Y. Dikme
  • , L. Khoshroo
  • , H. Kalisch
  • , R. A. Jansen
  • , M. B. Danailov
  • , A. A. Demidovich

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Laser properties of InGaN/GaN heterostructures grown on sil icon substrates were investigated under optical pumping by laser pulses of femtosecond duration. Gain spectra in the structures investigated were examined using the method of variable excitation stripe length. It was shown that laser spectra as well as optical gain spectra inside the structure are broadened considerably. Reasons causing spectra broadening are discussed.

Original languageEnglish
Title of host publicationPhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages156-159
Number of pages4
ISBN (Print)9814280356, 9789814280358
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2009 - Minsk, Belarus
Duration: 26 May 200929 May 2009

Publication series

NamePhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009

Conference

ConferenceInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2009
Country/TerritoryBelarus
CityMinsk
Period26/05/0929/05/09

Fingerprint

Dive into the research topics of 'Optical gain spectra and laser action of InGaN/GaN MQWs grown on silicon at pumping by femtosecond pulses'. Together they form a unique fingerprint.

Cite this