Optical investigation of exciton localization in Alx Ga1-x N

K. B. Lee; P. J. Parbrook; T. Wang; F. Ranalli; T. Martin; R. S. Balmer; D. J. Wallis

doi:10.1063/1.2434991

Optical investigation of exciton localization in Alx Ga1-x N

K. B. Lee
, P. J. Parbrook
, T. Wang
, F. Ranalli
, T. Martin
, R. S. Balmer
, D. J. Wallis

University of Sheffield
QinetiQ

Research output: Contribution to journal › Article › peer-review

Abstract

The optical properties of Alx Ga1-x N epilayers with x ranging from 0.08 to 0.52 have been studied by photoluminescence (PL). The temperature dependent PL of the Alx Ga1-x N epilayers shows a classical "S-shape" behavior. This behavior is attributed to exciton localization due to compositional fluctuations in the Alx Ga1-x N layers. The localization parameter extracted from temperature dependent PL, which gives an estimate of degree of localization, is found to increase with Al composition, up to a value of 52 meV at the highest Al composition studied. Several phonon replicas are observed at the lower energy side of the main excitonic emission peak in these epilayers at low temperature. In all cases, the Huang-Rhys parameter has been estimated. The Huang-Rhys parameter is found to increase with x indicating that the degree of localization again increases with x. In addition, the Huang-Rhys parameter is found to increase with higher order phonon replicas.

Original language	English
Article number	053513
Journal	Journal of Applied Physics
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.2434991
Publication status	Published - 2007
Externally published	Yes

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@article{62d186ab898245d08f383ce2006efecb,

title = "Optical investigation of exciton localization in Alx Ga1-x N",

abstract = "The optical properties of Alx Ga1-x N epilayers with x ranging from 0.08 to 0.52 have been studied by photoluminescence (PL). The temperature dependent PL of the Alx Ga1-x N epilayers shows a classical {"}S-shape{"} behavior. This behavior is attributed to exciton localization due to compositional fluctuations in the Alx Ga1-x N layers. The localization parameter extracted from temperature dependent PL, which gives an estimate of degree of localization, is found to increase with Al composition, up to a value of 52 meV at the highest Al composition studied. Several phonon replicas are observed at the lower energy side of the main excitonic emission peak in these epilayers at low temperature. In all cases, the Huang-Rhys parameter has been estimated. The Huang-Rhys parameter is found to increase with x indicating that the degree of localization again increases with x. In addition, the Huang-Rhys parameter is found to increase with higher order phonon replicas.",

author = "Lee, \{K. B.\} and Parbrook, \{P. J.\} and T. Wang and F. Ranalli and T. Martin and Balmer, \{R. S.\} and Wallis, \{D. J.\}",

year = "2007",

doi = "10.1063/1.2434991",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Optical investigation of exciton localization in Alx Ga1-x N

AU - Lee, K. B.

AU - Parbrook, P. J.

AU - Wang, T.

AU - Ranalli, F.

AU - Martin, T.

AU - Balmer, R. S.

AU - Wallis, D. J.

PY - 2007

Y1 - 2007

N2 - The optical properties of Alx Ga1-x N epilayers with x ranging from 0.08 to 0.52 have been studied by photoluminescence (PL). The temperature dependent PL of the Alx Ga1-x N epilayers shows a classical "S-shape" behavior. This behavior is attributed to exciton localization due to compositional fluctuations in the Alx Ga1-x N layers. The localization parameter extracted from temperature dependent PL, which gives an estimate of degree of localization, is found to increase with Al composition, up to a value of 52 meV at the highest Al composition studied. Several phonon replicas are observed at the lower energy side of the main excitonic emission peak in these epilayers at low temperature. In all cases, the Huang-Rhys parameter has been estimated. The Huang-Rhys parameter is found to increase with x indicating that the degree of localization again increases with x. In addition, the Huang-Rhys parameter is found to increase with higher order phonon replicas.

AB - The optical properties of Alx Ga1-x N epilayers with x ranging from 0.08 to 0.52 have been studied by photoluminescence (PL). The temperature dependent PL of the Alx Ga1-x N epilayers shows a classical "S-shape" behavior. This behavior is attributed to exciton localization due to compositional fluctuations in the Alx Ga1-x N layers. The localization parameter extracted from temperature dependent PL, which gives an estimate of degree of localization, is found to increase with Al composition, up to a value of 52 meV at the highest Al composition studied. Several phonon replicas are observed at the lower energy side of the main excitonic emission peak in these epilayers at low temperature. In all cases, the Huang-Rhys parameter has been estimated. The Huang-Rhys parameter is found to increase with x indicating that the degree of localization again increases with x. In addition, the Huang-Rhys parameter is found to increase with higher order phonon replicas.

UR - https://www.scopus.com/pages/publications/33947321120

U2 - 10.1063/1.2434991

DO - 10.1063/1.2434991

M3 - Article

AN - SCOPUS:33947321120

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053513

ER -

Optical investigation of exciton localization in Alx Ga1-x N

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