Optical properties of a-Si3N4 and a-SiOxNy

M. Modreanu; N. Tomozeiu; P. Cosmin; M. Gartner

Optical properties of a-Si₃N₄ and a-SiO_xN_y

M. Modreanu
, N. Tomozeiu
, P. Cosmin
, M. Gartner

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

Some optical properties of a-SiN_x and a-SiO_xN_y films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.

Original language	English
Pages	497-500
Number of pages	4
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania Duration: 7 Oct 1997 → 11 Oct 1997

Conference

Conference	Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
City	Sinaia, Romania
Period	7/10/97 → 11/10/97

Cite this

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title = "Optical properties of a-Si3N4 and a-SiOxNy ",

abstract = "Some optical properties of a-SiNx and a-SiOxNy films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.",

author = "M. Modreanu and N. Tomozeiu and P. Cosmin and M. Gartner",

year = "1997",

language = "English",

pages = "497--500",

note = "Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) ; Conference date: 07-10-1997 Through 11-10-1997",

}

TY - CONF

T1 - Optical properties of a-Si3N4 and a-SiOxNy

AU - Modreanu, M.

AU - Tomozeiu, N.

AU - Cosmin, P.

AU - Gartner, M.

PY - 1997

Y1 - 1997

N2 - Some optical properties of a-SiNx and a-SiOxNy films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.

AB - Some optical properties of a-SiNx and a-SiOxNy films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.

UR - https://www.scopus.com/pages/publications/0030635470

M3 - Paper

AN - SCOPUS:0030635470

SP - 497

EP - 500

T2 - Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)

Y2 - 7 October 1997 through 11 October 1997

ER -

Optical properties of a-Si₃N₄ and a-SiO_xN_y

Abstract

Conference

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