Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films

Darragh Buckley; Robert McCormack; David McNuIty; Vitaly Zubialevich; Peter Parbrook; Colm O'Dwyer

doi:10.1149/07706.0075ecst

Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films

Darragh Buckley
, Robert McCormack
, David McNuIty
, Vitaly Zubialevich
, Peter Parbrook
, Colm O'Dwyer

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 18
Editors	V. Chakrapani, S. Calabrese Barton, J. Zavada, S. Jang, T. Anderson, J. Hite
Publisher	Electrochemical Society Inc.
Pages	75-82
Number of pages	8
Edition	6
ISBN (Electronic)	9781607688099
DOIs	https://doi.org/10.1149/07706.0075ecst
Publication status	Published - 2017
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 18 - 231st ECS Meeting 2017 - New Orleans, United States Duration: 28 May 2017 → 1 Jun 2017

Publication series

Name	ECS Transactions
Number	6
Volume	77
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 18 - 231st ECS Meeting 2017
Country/Territory	United States
City	New Orleans
Period	28/05/17 → 1/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1149/07706.0075ecst

Cite this

Buckley, D., McCormack, R., McNuIty, D., Zubialevich, V., Parbrook, P., & O'Dwyer, C. (2017). Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films. In V. Chakrapani, S. Calabrese Barton, J. Zavada, S. Jang, T. Anderson, & J. Hite (Eds.), Wide Bandgap Semiconductor Materials and Devices 18 (6 ed., pp. 75-82). (ECS Transactions; Vol. 77, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/07706.0075ecst

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title = "Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films",

abstract = "Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.",

author = "Darragh Buckley and Robert McCormack and David McNuIty and Vitaly Zubialevich and Peter Parbrook and Colm O'Dwyer",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 18 - 231st ECS Meeting 2017 ; Conference date: 28-05-2017 Through 01-06-2017",

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Buckley, D, McCormack, R, McNuIty, D, Zubialevich, V , Parbrook, P & O'Dwyer, C 2017, Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films. in V Chakrapani, S Calabrese Barton, J Zavada, S Jang, T Anderson & J Hite (eds), Wide Bandgap Semiconductor Materials and Devices 18. 6 edn, ECS Transactions, no. 6, vol. 77, Electrochemical Society Inc., pp. 75-82, Symposium on Wide Bandgap Semiconductor Materials and Devices 18 - 231st ECS Meeting 2017, New Orleans, United States, 28/05/17. https://doi.org/10.1149/07706.0075ecst

Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films. / Buckley, Darragh; McCormack, Robert; McNuIty, David et al.
Wide Bandgap Semiconductor Materials and Devices 18. ed. / V. Chakrapani; S. Calabrese Barton; J. Zavada; S. Jang; T. Anderson; J. Hite. 6. ed. Electrochemical Society Inc., 2017. p. 75-82 (ECS Transactions; Vol. 77, No. 6).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Buckley, Darragh

AU - McCormack, Robert

AU - McNuIty, David

AU - Zubialevich, Vitaly

AU - Parbrook, Peter

AU - O'Dwyer, Colm

N1 - Publisher Copyright: © The Electrochemical Society.

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N2 - Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.

AB - Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.

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Buckley D, McCormack R, McNuIty D, Zubialevich V , Parbrook P , O'Dwyer C. Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films. In Chakrapani V, Calabrese Barton S, Zavada J, Jang S, Anderson T, Hite J, editors, Wide Bandgap Semiconductor Materials and Devices 18. 6 ed. Electrochemical Society Inc. 2017. p. 75-82. (ECS Transactions; 6). doi: 10.1149/07706.0075ecst

Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films

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