TY - GEN
T1 - Optical reflectivity of spin-coated multilayered ZnO and AhZnO thin films
AU - Buckley, Darragh
AU - McCormack, Robert
AU - McNuIty, David
AU - Zubialevich, Vitaly
AU - Parbrook, Peter
AU - O'Dwyer, Colm
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2017
Y1 - 2017
N2 - Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.
AB - Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.
UR - https://www.scopus.com/pages/publications/85021808558
U2 - 10.1149/07706.0075ecst
DO - 10.1149/07706.0075ecst
M3 - Conference proceeding
AN - SCOPUS:85021808558
T3 - ECS Transactions
SP - 75
EP - 82
BT - Wide Bandgap Semiconductor Materials and Devices 18
A2 - Chakrapani, V.
A2 - Calabrese Barton, S.
A2 - Zavada, J.
A2 - Jang, S.
A2 - Anderson, T.
A2 - Hite, J.
PB - Electrochemical Society Inc.
T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 18 - 231st ECS Meeting 2017
Y2 - 28 May 2017 through 1 June 2017
ER -