Abstract
The low-temperature resistance of a conducting LaAlO3/SrTiO 3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO 3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.
| Original language | English |
|---|---|
| Article number | 051604 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 4 Feb 2013 |
| Externally published | Yes |
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