TY - JOUR
T1 - Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures
AU - Lutsenko, Evgenii V.
AU - Zubialevich, Vitalii Z.
AU - Pavlovskii, Vyacheslav N.
AU - Marko, Igor P.
AU - Gurskii, Alexander L.
AU - Yablonskii, Gennadii P.
AU - Kalisch, Holger
AU - Walther, Thomas
AU - Schoen, Oliver
AU - Protzmann, Harry
AU - Luenenbuerger, Markus
AU - Schineller, Bernd
AU - Heuken, Michael
PY - 2002
Y1 - 2002
N2 - ZnSe/ZnMgSSe and InGaN/GaN heterostructure based lasers under optical transverse pumping by pulsed N2-laser radiation were investigated in a wide spectral, temperature and excitation intensity range for various types of heterostructures which differed in the epitaxial layer composition, layer sequence and thickness. The spectral-angular distribution of the laser emission of the ZnSe/ZnMgSSe separate confinement heterostructures (SCHs) and the influence of the excitation intensity and the cavity length on the laser mode structure were investigated. It was found that the main degradation mechanism of the ZnSe/ZnMgSSe multiple quantum well (MQW) heterostructures at temperatures higher than 400 K is the diffusion of S atoms from the barriers into the quantum wells which leads to increasing point defect concentrations in the active layers of the lasers. The recovery of the laser threshold of the ZnSe/ZnMgSSe MQW-SCHs degraded during thermal annealing after the action of the inherent laser radiation is attributed to a significant decrease of the point defects (mainly VSe and Si) in the active layers. Laser action of InGaN/GaN multiple quantum well heterostructures in the blue spectral region (450-470 nm) has been obtained for the first time and investigated. Temperature tuning of InGaN/GaN MQW laser emission from the violet to blue (437.3-452.0 nm) has been realised. The influence of the photoluminescence characteristics on the laser parameters of the InGaN/GaN MQW optically pumped lasers operating in the blue spectral region is investigated.
AB - ZnSe/ZnMgSSe and InGaN/GaN heterostructure based lasers under optical transverse pumping by pulsed N2-laser radiation were investigated in a wide spectral, temperature and excitation intensity range for various types of heterostructures which differed in the epitaxial layer composition, layer sequence and thickness. The spectral-angular distribution of the laser emission of the ZnSe/ZnMgSSe separate confinement heterostructures (SCHs) and the influence of the excitation intensity and the cavity length on the laser mode structure were investigated. It was found that the main degradation mechanism of the ZnSe/ZnMgSSe multiple quantum well (MQW) heterostructures at temperatures higher than 400 K is the diffusion of S atoms from the barriers into the quantum wells which leads to increasing point defect concentrations in the active layers of the lasers. The recovery of the laser threshold of the ZnSe/ZnMgSSe MQW-SCHs degraded during thermal annealing after the action of the inherent laser radiation is attributed to a significant decrease of the point defects (mainly VSe and Si) in the active layers. Laser action of InGaN/GaN multiple quantum well heterostructures in the blue spectral region (450-470 nm) has been obtained for the first time and investigated. Temperature tuning of InGaN/GaN MQW laser emission from the violet to blue (437.3-452.0 nm) has been realised. The influence of the photoluminescence characteristics on the laser parameters of the InGaN/GaN MQW optically pumped lasers operating in the blue spectral region is investigated.
KW - GaN
KW - Heterostructure
KW - InGaN
KW - Laser
KW - Quantum well
KW - ZnMgSSe
KW - ZnSe
UR - https://www.scopus.com/pages/publications/18644377198
U2 - 10.1117/12.475959
DO - 10.1117/12.475959
M3 - Article
AN - SCOPUS:18644377198
SN - 0277-786X
VL - 4751
SP - 542
EP - 548
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
ER -