Optimisation and scaling of interfacial GeO <inf>2</inf> layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO <inf>2</inf>

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135337
Publication status	Published - 2011

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@inproceedings{3491d4e91b2c4fc4ba240e459605a02a,

title = "Optimisation and scaling of interfacial GeO 2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO 2",

author = "S.N.A. Murad and D.W. McNeill and S.J.N. Mitchell and B.M. Armstrong and M. Modreanu and G. Hughes and R.K. Chellappan",

year = "2011",

doi = "10.1109/ISDRS.2011.6135337",

language = "Undefined/Unknown",

booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

}

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Optimisation and scaling of interfacial GeO 2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO 2

AU - Murad, S.N.A.

AU - McNeill, D.W.

AU - Mitchell, S.J.N.

AU - Armstrong, B.M.

AU - Modreanu, M.

AU - Hughes, G.

AU - Chellappan, R.K.

PY - 2011

Y1 - 2011

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84857212943&partnerID=MN8TOARS

U2 - 10.1109/ISDRS.2011.6135337

DO - 10.1109/ISDRS.2011.6135337

M3 - Conference proceeding

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

ER -