@inbook{6cbfbc2a655541b882d9e5e81c68d059,
title = "Optimisation and scaling of interfacial GeO 2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO 2 ",
abstract = "Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO 2 has been investigated as an interfacial layer for high-k gate stacks. Thermally grown GeO 2 layers have been prepared at 550 C to minimize GeO volatilization. GeO 2 growth has been performed in both pure O 2 ambient and O 2 diluted with N 2. GeO 2 thickness has been scaled down to 3.15 nm. MOS capacitors have been fabricated using different GeO 2 thicknesses with a standard high-K dielectric on top. Electrical properties and thermal stability have been tested up to at least 350C. The k value of GeO 2 was calculated as 4.5. Interface state densities (D it) of less than 10 12 cm 2 eV 1 have been extracted for all devices using the conductance method.",
author = "Murad, \{S. N.Ali\} and McNeill, \{D. W.\} and Mitchell, \{S. J.N.\} and Armstrong, \{B. M.\} and M. Modreanu and G. Hughes and Chellappan, \{R. K.\}",
year = "2011",
doi = "10.1109/ISDRS.2011.6135337",
language = "English",
isbn = "9781457717550",
series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",
booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",
note = "2011 International Semiconductor Device Research Symposium, ISDRS 2011 ; Conference date: 07-12-2011 Through 09-12-2011",
}