Optimisation and scaling of interfacial GeO ₂ layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO ₂

Material Science

• Germanium 100%
• Permittivity 100%
• Silicon 50%
• Density 50%
• Capacitor 50%
• Thermal Stability 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• High-K Dielectric 50%

Engineering

• Dielectrics 100%
• Gate Stack 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Interface State 50%
• Interfacial Layer 50%
• Vaporization 50%