Optimisation and scaling of interfacial GeO 2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO 2

S. N.A. Murad; P. T. Baine; D. W. McNeill; S. J.N. Mitchell; B. M. Armstrong; M. Modreanu; G. Hughes; R. K. Chellappan

doi:10.1016/j.sse.2012.05.048

Optimisation and scaling of interfacial GeO ₂ layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO ₂

S. N.A. Murad
, P. T. Baine
, D. W. McNeill
, S. J.N. Mitchell
, B. M. Armstrong
, M. Modreanu
, G. Hughes
, R. K. Chellappan

Research output: Contribution to journal › Article › peer-review

Abstract

Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO ₂ has been investigated as an interfacial layer for high-κ gate stacks on germanium. Thermally grown GeO ₂ layers have been prepared at 550 °C to minimise GeO volatilisation. GeO ₂ growth has been performed in both pure O ₂ ambient and O ₂ diluted with N ₂. GeO ₂ thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO ₂ thicknesses with a standard high-κ dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 °C. The κ value of GeO ₂ was experimentally determined to be 4.5. Interface state densities (D _it) of less than 10 ¹² cm ^-2 eV ^-1 have been extracted for all devices using the conductance method. front matter

Original language	English
Pages (from-to)	136-140
Number of pages	5
Journal	Solid-State Electronics
Volume	78
DOIs	https://doi.org/10.1016/j.sse.2012.05.048
Publication status	Published - Dec 2012

Keywords

Germanium
High-κ gate stacks
MOS capacitors
Thermal GeO growth

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10.1016/j.sse.2012.05.048

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title = "Optimisation and scaling of interfacial GeO 2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO 2 ",

abstract = "Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO 2 has been investigated as an interfacial layer for high-κ gate stacks on germanium. Thermally grown GeO 2 layers have been prepared at 550 °C to minimise GeO volatilisation. GeO 2 growth has been performed in both pure O 2 ambient and O 2 diluted with N 2. GeO 2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO 2 thicknesses with a standard high-κ dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 °C. The κ value of GeO 2 was experimentally determined to be 4.5. Interface state densities (D it) of less than 10 12 cm -2 eV -1 have been extracted for all devices using the conductance method. front matter",

keywords = "Germanium, High-κ gate stacks, MOS capacitors, Thermal GeO growth",

author = "Murad, \{S. N.A.\} and Baine, \{P. T.\} and McNeill, \{D. W.\} and Mitchell, \{S. J.N.\} and Armstrong, \{B. M.\} and M. Modreanu and G. Hughes and Chellappan, \{R. K.\}",

year = "2012",

month = dec,

doi = "10.1016/j.sse.2012.05.048",

language = "English",

volume = "78",

pages = "136--140",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Optimisation and scaling of interfacial GeO 2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO 2

AU - Murad, S. N.A.

AU - Baine, P. T.

AU - McNeill, D. W.

AU - Mitchell, S. J.N.

AU - Armstrong, B. M.

AU - Modreanu, M.

AU - Hughes, G.

AU - Chellappan, R. K.

PY - 2012/12

Y1 - 2012/12

N2 - Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO 2 has been investigated as an interfacial layer for high-κ gate stacks on germanium. Thermally grown GeO 2 layers have been prepared at 550 °C to minimise GeO volatilisation. GeO 2 growth has been performed in both pure O 2 ambient and O 2 diluted with N 2. GeO 2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO 2 thicknesses with a standard high-κ dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 °C. The κ value of GeO 2 was experimentally determined to be 4.5. Interface state densities (D it) of less than 10 12 cm -2 eV -1 have been extracted for all devices using the conductance method. front matter

AB - Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO 2 has been investigated as an interfacial layer for high-κ gate stacks on germanium. Thermally grown GeO 2 layers have been prepared at 550 °C to minimise GeO volatilisation. GeO 2 growth has been performed in both pure O 2 ambient and O 2 diluted with N 2. GeO 2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO 2 thicknesses with a standard high-κ dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 °C. The κ value of GeO 2 was experimentally determined to be 4.5. Interface state densities (D it) of less than 10 12 cm -2 eV -1 have been extracted for all devices using the conductance method. front matter

KW - Germanium

KW - High-κ gate stacks

KW - MOS capacitors

KW - Thermal GeO growth

UR - https://www.scopus.com/pages/publications/84866057964

U2 - 10.1016/j.sse.2012.05.048

DO - 10.1016/j.sse.2012.05.048

M3 - Article

AN - SCOPUS:84866057964

SN - 0038-1101

VL - 78

SP - 136

EP - 140

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Optimisation and scaling of interfacial GeO ₂ layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO ₂

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Keywords

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