Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy

P. J. Parbrook; D. A. Wood; W. S. Tan; P. A. Houston; G. Hill; C. R. Whitehouse; R. W. Martin; C. Trager-Cowan; A. Watt

doi:10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P

Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy

P. J. Parbrook
, D. A. Wood
, W. S. Tan
, P. A. Houston
, G. Hill
, C. R. Whitehouse
, R. W. Martin
, C. Trager-Cowan
, A. Watt

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of both the AlGaN barrier and GaN underlayer in single heterostructures has bees examined. The results show that room temperature Hall measurements can lead to an overestimate of the sheet carrier concentration due to bulk contributions. Orders of magnitude increase of in the GaN resistivity can be achieved by reducing the growth temperature. The luminescence properties of the structure have been examined by cathodoluminescence showing strong features attributable to the two-dimensional electron gas.

Original language	English
Pages (from-to)	227-231
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P
Publication status	Published - Nov 2001
Externally published	Yes

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10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P

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Parbrook, P. J., Wood, D. A., Tan, W. S., Houston, P. A., Hill, G., Whitehouse, C. R., Martin, R. W., Trager-Cowan, C., & Watt, A. (2001). Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy. Physica Status Solidi (A) Applied Research, 188(1), 227-231. https://doi.org/10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P

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title = "Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy",

abstract = "The influence of both the AlGaN barrier and GaN underlayer in single heterostructures has bees examined. The results show that room temperature Hall measurements can lead to an overestimate of the sheet carrier concentration due to bulk contributions. Orders of magnitude increase of in the GaN resistivity can be achieved by reducing the growth temperature. The luminescence properties of the structure have been examined by cathodoluminescence showing strong features attributable to the two-dimensional electron gas.",

author = "Parbrook, \{P. J.\} and Wood, \{D. A.\} and Tan, \{W. S.\} and Houston, \{P. A.\} and G. Hill and Whitehouse, \{C. R.\} and Martin, \{R. W.\} and C. Trager-Cowan and A. Watt",

year = "2001",

month = nov,

doi = "10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P",

language = "English",

volume = "188",

pages = "227--231",

journal = "Physica Status Solidi (A) Applied Research",

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}

Parbrook, PJ, Wood, DA, Tan, WS, Houston, PA, Hill, G, Whitehouse, CR, Martin, RW, Trager-Cowan, C & Watt, A 2001, 'Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy', Physica Status Solidi (A) Applied Research, vol. 188, no. 1, pp. 227-231. https://doi.org/10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P

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T1 - Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy

AU - Parbrook, P. J.

AU - Wood, D. A.

AU - Tan, W. S.

AU - Houston, P. A.

AU - Hill, G.

AU - Whitehouse, C. R.

AU - Martin, R. W.

AU - Trager-Cowan, C.

AU - Watt, A.

PY - 2001/11

Y1 - 2001/11

N2 - The influence of both the AlGaN barrier and GaN underlayer in single heterostructures has bees examined. The results show that room temperature Hall measurements can lead to an overestimate of the sheet carrier concentration due to bulk contributions. Orders of magnitude increase of in the GaN resistivity can be achieved by reducing the growth temperature. The luminescence properties of the structure have been examined by cathodoluminescence showing strong features attributable to the two-dimensional electron gas.

AB - The influence of both the AlGaN barrier and GaN underlayer in single heterostructures has bees examined. The results show that room temperature Hall measurements can lead to an overestimate of the sheet carrier concentration due to bulk contributions. Orders of magnitude increase of in the GaN resistivity can be achieved by reducing the growth temperature. The luminescence properties of the structure have been examined by cathodoluminescence showing strong features attributable to the two-dimensional electron gas.

UR - https://www.scopus.com/pages/publications/1942456769

U2 - 10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P

DO - 10.1002/1521-396X(200111)188:1<227::AID-PSSA227>3.0.CO;2-P

M3 - Article

AN - SCOPUS:1942456769

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VL - 188

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy

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