Optimized laser thermal annealing on germanium for high dopant activation and low leakage current

Maryam Shayesteh; Dan O. Connell; Farzan Gity; Philip Murphy-Armando; Ran Yu; Karim Huet; Ines Toque-Tresonne; Fuccio Cristiano; Simona Boninelli; Henrik Hartmann Henrichsen; Peter Folmer Nielsen; Dirch Hjorth Petersen; Ray Duffy

doi:10.1109/TED.2014.2364957

Optimized laser thermal annealing on germanium for high dopant activation and low leakage current

Maryam Shayesteh
, Dan O. Connell
, Farzan Gity
, Philip Murphy-Armando
, Ran Yu
, Karim Huet
, Ines Toque-Tresonne
, Fuccio Cristiano
, Simona Boninelli
, Henrik Hartmann Henrichsen
, Peter Folmer Nielsen
, Dirch Hjorth Petersen
, Ray Duffy

Synopsys Inc.
SCREEN Holdings Co., Ltd.
Université Fédérale Toulouse Midi-Pyrénées
National Research Council of Italy
CAPRES A/S
Technical University of Denmark

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n+/p junctions. Using LTA, high carrier concentration above 10²⁰cm^-3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I_ONI_OFF ratio ∼ 10⁵ and ideality factor (n)~∼ 1.2 , as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I_ONI_OFF ratio ^sim; 10⁷ and n ∼ 1 , at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

Original language	English
Article number	6945879
Pages (from-to)	4047-4055
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	12
DOIs	https://doi.org/10.1109/TED.2014.2364957
Publication status	Published - 1 Dec 2014

Keywords

Ge
laser thermal annealing (LTA)
leakage current
n+/p junction.

Access to Document

10.1109/TED.2014.2364957

Cite this

Shayesteh, M., Connell, D. O., Gity, F., Murphy-Armando, P., Yu, R., Huet, K., Toque-Tresonne, I., Cristiano, F., Boninelli, S., Henrichsen, H. H., Nielsen, P. F., Petersen, D. H., & Duffy, R. (2014). Optimized laser thermal annealing on germanium for high dopant activation and low leakage current. IEEE Transactions on Electron Devices, 61(12), 4047-4055. Article 6945879. https://doi.org/10.1109/TED.2014.2364957

@article{02772867f66d4bf590f82c87e61dd3b5,

title = "Optimized laser thermal annealing on germanium for high dopant activation and low leakage current",

abstract = "In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n+/p junctions. Using LTA, high carrier concentration above 1020cm-3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode IONIOFF ratio ∼ 105 and ideality factor (n)\textasciitilde{}∼ 1.2 , as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high IONIOFF ratio \textasciicircum{}sim; 107 and n ∼ 1 , at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.",

keywords = "Ge, laser thermal annealing (LTA), leakage current, n+/p junction.",

author = "Maryam Shayesteh and Connell, \{Dan O.\} and Farzan Gity and Philip Murphy-Armando and Ran Yu and Karim Huet and Ines Toque-Tresonne and Fuccio Cristiano and Simona Boninelli and Henrichsen, \{Henrik Hartmann\} and Nielsen, \{Peter Folmer\} and Petersen, \{Dirch Hjorth\} and Ray Duffy",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/TED.2014.2364957",

language = "English",

volume = "61",

pages = "4047--4055",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

Shayesteh, M, Connell, DO, Gity, F, Murphy-Armando, P, Yu, R, Huet, K, Toque-Tresonne, I, Cristiano, F, Boninelli, S, Henrichsen, HH, Nielsen, PF, Petersen, DH & Duffy, R 2014, 'Optimized laser thermal annealing on germanium for high dopant activation and low leakage current', IEEE Transactions on Electron Devices, vol. 61, no. 12, 6945879, pp. 4047-4055. https://doi.org/10.1109/TED.2014.2364957

TY - JOUR

T1 - Optimized laser thermal annealing on germanium for high dopant activation and low leakage current

AU - Shayesteh, Maryam

AU - Connell, Dan O.

AU - Gity, Farzan

AU - Murphy-Armando, Philip

AU - Yu, Ran

AU - Huet, Karim

AU - Toque-Tresonne, Ines

AU - Cristiano, Fuccio

AU - Boninelli, Simona

AU - Henrichsen, Henrik Hartmann

AU - Nielsen, Peter Folmer

AU - Petersen, Dirch Hjorth

AU - Duffy, Ray

PY - 2014/12/1

Y1 - 2014/12/1

N2 - In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n+/p junctions. Using LTA, high carrier concentration above 1020cm-3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode IONIOFF ratio ∼ 105 and ideality factor (n)~∼ 1.2 , as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high IONIOFF ratio ^sim; 107 and n ∼ 1 , at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

AB - In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n+/p junctions. Using LTA, high carrier concentration above 1020cm-3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode IONIOFF ratio ∼ 105 and ideality factor (n)~∼ 1.2 , as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high IONIOFF ratio ^sim; 107 and n ∼ 1 , at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.

KW - Ge

KW - laser thermal annealing (LTA)

KW - leakage current

KW - n+/p junction.

UR - https://www.scopus.com/pages/publications/84919497281

U2 - 10.1109/TED.2014.2364957

DO - 10.1109/TED.2014.2364957

M3 - Article

AN - SCOPUS:84919497281

SN - 0018-9383

VL - 61

SP - 4047

EP - 4055

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 6945879

ER -

Optimized laser thermal annealing on germanium for high dopant activation and low leakage current

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this