Orientation of cracks in AlGaN epilayers with sapphire substrates

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Abstract

The orientation of cracks in AlGaN epilayers with sapphire substrates was presented. The cracks were observed by Nomarski interference microscopy. To confirm the orientation deduced by optical microscopy, cross section Transmission electron microscopy samples were prepared by ion milling. It was found that the cracks lied along three directions rotated by 120°C relative to each other.

Original languageEnglish
Pages (from-to)113-114
Number of pages2
JournalJournal of Materials Science Letters
Volume22
Issue number2
DOIs
Publication statusPublished - 15 Jan 2003
Externally publishedYes

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